Some critical materials and processing issues in SiC power devices
Some critical materials and processing issues in SiC power devices
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DOI：
10.1007/s11664-007-0321-3
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发表时间：
2008-05-01
影响因子：
2.1
通讯作者：
Haney, Sarah
中科院分区：
文献类型：
--
作者：
Agarwal, Anant;Haney, Sarah
过去几年，碳化硅材料和功率器件取得了快速进步。然而，材料界忽视了一些关键问题，这些问题可能会威胁未来几年碳化硅功率器件的出现。本文将介绍其中一些压制材料和加工问题。第一个问题涉及 SiC/SiO2 界面下 SiC 中工艺引起的体陷阱的可能性，这可能与 SiC 金属氧化物半导体场效应晶体管 (MOSFET) 中有效反型层电子迁移率的降低有关。第二个问题涉及复合引起的堆垛层错 (SF) 对多数载流子器件（例如 MOSFET、肖特基二极管和结型场效应晶体管 (JFET)）的影响。过去，人们认为 SF 仅影响双极器件，例如 PiN 二极管和晶闸管。然而，大多数多数载流子器件都具有内置 p-n 结二极管，这些二极管在电路工作期间可能会出现正向偏置。因此，所有高压 SiC 器件都容易受到这种现象的影响。
There has been a rapid improvement in SiC materials and power devices during the last few years. However, the materials community has overlooked some critical issues, which may threaten the emergence of SiC power devices in the coming years. Some of these pressing materials and processing issues will be presented in this paper. The first issue deals with the possibility of process-induced bulk traps in SiC immediately under the SiC/SiO2 interface, which may be involved in the reduction of effective inversion layer electron mobility in SiC metal-oxide-semiconductor field-effect transistor (MOSFETs). The second issue addresses the effect of recombination-induced stacking faults (SFs) in majority carrier devices such as MOSFETs, Schottky diodes, and junction field-effect transistors (JFETs). In the past it was assumed that the SFs only affect the bipolar devices such as PiN diodes and thyristors. However, most majority carrier devices have built-in p-n junction diodes, which can become forward biased during operation in a circuit. Thus, all high-voltage SiC devices are susceptible to this phenomenon.