Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
复制标题
DOI：
10.1063/1.4930980
复制
发表时间：
2015-09-01
期刊：
影响因子：
1.6
通讯作者：
Watanabe, Heiji
中科院分区：
文献类型：
--
作者：
Chanthaphan, Atthawut;Hosoi, Takuji;Watanabe, Heiji
提出了一种用于4H-SiC金属氧化物半导体（MOS）器件界面氮化的有效方法。研究发现，N-2环境下的高温后氧化退火（POA）有利于将足够数量的氮原子直接结合到热SiO2/SiC界面中。虽然N-2-POA对热氧化层较厚的样品无效，但在一定条件下，即较薄的SiO2层（< 15 nm）和较高的退火温度（> 1350℃）下，N-2-POA可以实现界面氮化。经高温N-2-POA处理的SiC-MOS电容器的电学特性表明，在优化的氮化条件下，经过no处理的器件发生了缓慢的陷阱钝化和快速的陷阱生成。(C) 2015作者。除另有说明外，所有文章内容均采用知识共享署名3.0未移植许可协议。
An alternative and effective method to perform interface nitridation for 4H-SiC metal-oxide-semiconductor (MOS) devices was developed. We found that the high-temperature post-oxidation annealing (POA) in N-2 ambient was beneficial to incorporate a sufficient amount of nitrogen atoms directly into thermal SiO2/SiC interfaces. Although N-2-POA was ineffective for samples with thick thermal oxide layers, interface nitridation using N-2-POA was achieved under certain conditions, i.e., thin SiO2 layers (< 15 nm) and high annealing temperatures (> 1350 degrees C). Electrical characterizations of SiC-MOS capacitors treated with high-temperature N-2-POA revealed the same evidence of slow trap passivation and fast trap generation that occurred in NO-treated devices fabricated with the optimized nitridation conditions. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.