Double resonance mechanism of ferromagnetism and magnetotransport in (Ga-Mn)As
Double resonance mechanism of ferromagnetism and magnetotransport in (Ga-Mn)As
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DOI：
10.1103/physrevlett.85.4610
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发表时间：
2000-11
影响因子：
8.6
通讯作者：
Inoue;Nonoyama;Itoh
中科院分区：
文献类型：
--
作者：
Inoue;Nonoyama;Itoh
我们计算了 Mn 掺杂半导体的电子态，结果表明，由于磁性杂质，在下自旋价带顶部形成了谐振态，并且它们在 Mn 矩之间产生了强且长程的铁磁耦合。我们提出，除了共振态和非键合态之间的原子内交换相互作用之外，共振态的耦合是(Ga-Mn)As铁磁性的根源。该机制因此被称为“双共振”。谐振态带来自旋相关电阻率，从而在 (Ga-Mn)As 及其结中产生磁阻特性。
We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. We propose that the coupling of the resonant states, in addition to the intra-atomic exchange interaction between the resonant and nonbonding states, is the origin of the ferromagnetism of (Ga-Mn)As. The mechanism is thus called "double resonance." The resonant states bring about the spin-dependent resistivity to produce magnetoresistive properties in (Ga-Mn)As and their junctions.