Influence of Electronic Configurations on the Modulation of Fermi/Orbital Junction Energies for Directional Electron Transport through 3d 1 , 3d 3 , and 3d 5 Metallosurfactants
Influence of Electronic Configurations on the Modulation of Fermi/Orbital Junction Energies for Directional Electron Transport through 3d 1 , 3d 3 , and 3d 5 Metallosurfactants
复制标题
电子构型对 3d 1 、3d 3 和 3d 5 金属表面活性剂定向电子传输的费米/轨道结能量调制的影响
DOI:
10.1021/acs.jpcc.2c04840
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发表时间:
2022
期刊:
影响因子:
--
通讯作者:
Verani, Cláudio N.
中科院分区:
文献类型:
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作者:
Weeraratne, A. D.;Rani, Neha;Amunugama, Samudra;Perera, S. Sameera;Kpogo, Kenneth K.;Mazumder, Shivnath;Verani, Cláudio N.
Two new metallosurfactants containing the 3d1vanadyl(IV) and 3d3chromium(III) ions bound to the phenylenediamine-bridged phenolate-rich ligand LN2O2were designed, deposited as monolayer films on gold electrodes, and probed for directional electron transfer in Au|LB|Au junctions. Both [V═OIVLN2O2](1)and [CrIII(LN2O2)(MeOH)(H2O)]Cl(2)promote current rectification. Through a concerted experimental and computational effort, we compare the behavior of1and2with that of our previously studied 3d5[FeIII(LN2O2)Cl](3). Based on the analysis of comprehensive electrochemical, spectroscopic, and microscopy results allied to DFT calculations, we propose distinct mechanisms by which electronic configurations influence the energy gap between the electrode Fermi levels and the different molecular orbitals responsible for electron transport. While the 3d5species3shows electron transport through the metal-based SOMO located above the Fermi levels of the electrode, the 3d1species1uses a metal-based SOMO below Fermi, and the 3d3species2takes advantage of a ligand-based HOMO, which becomes available when a bias is applied.