The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
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晶体管参数对基层电阻率分布的依赖性
DOI：
10.1109/jrproc.1956.274853
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发表时间：
1956
期刊：
影响因子：
--
通讯作者：
I. M. Ross
中科院分区：
文献类型：
--
作者：
J. Moll;I. M. Ross
本文提出了一种分析任何基层杂质分布情况下晶体管性能的方法。特别地，导出了发射极效率γ，横向片电阻R，传输时间t和频率截止fα的表达式。参数γ和R仅是基层杂质总数的函数。该分析用于推导四种不同分布的γ， R， t和fα -均匀，线性，指数和互补误差函数。对于这些分布中的每一个，都得到了等效于R和fα的晶体管基层设计。比较表明，对于等效参数，非均匀分布允许使用更宽的基材层，但需要更大的最大杂质浓度，并且必须在高电流密度下操作
This paper presents a method of analyzing transistor behavior for any base-layer impurity distribution. In particular, expressions are derived for emitter efficiency γ, transverse sheet resistance R, transit time t, and frequency cut-off fα. The parameters γ and R are functions only of the total number of impurities in the base layer. The analysis is used to derive γ, R, t and fα for four different distributions-uniform, linear, exponential, and complementary error function. For each of these distributions a transistor base-layer design equivalent in R and fα is obtained. Comparison shows that for equivalent parameters the nonuniform distributions permit the use of wider base layers, but require greater maximum impurity concentrations and must be operated at high current densi