Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide
Microtrench Formation in Polysilicon Plasma Etching over Thin Gate Oxide
复制标题
薄栅氧化层上多晶硅等离子蚀刻中微沟槽的形成
DOI：
10.1149/1.2220831
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
D. Corliss
中科院分区：
文献类型：
--
作者：
T. Dalton;J. Arnold;H. Sawin;S. Swan;D. Corliss
观察和模拟了等离子体刻蚀多晶硅在薄栅氧化物上形成微沟槽的过程。微沟槽是在刻蚀特征的底部形成的小沟槽，由栅氧化层的局部突破和随后对底层硅的快速刻蚀引起。与以前的报道不同，微沟槽的形成和位置与光致抗蚀剂和多晶硅侧壁的厚度和角度有关，距离侧壁很近。对刻蚀特征侧壁的离子散射的模拟表明，在本研究的工艺条件下，特征底部的离子通量在远离侧壁处达到峰值
The formation of microtrenches in polysilic on plasma etching over thin gate oxides has been observed and modeled. Microtrenches are small trenches formed in the bottom of etching features and are caused by the localized breakthrough of the gate oxide and subsequent rapid etching of the underlying silicon. In contrast to previous reports, the microtrenches were observed a small distance away from the sidewall, their formation and position were functions of the thickness and angle of the photoresist and polysilicon sidewalls. Simulation of ion scattering from the sidewalls of the etching features indicated that the flux of ions at the bottom of the feature was peaked away from the sidewall under the process conditions of this study