Novel Boron Nitride Hollow Nanoribbons

Novel Boron Nitride Hollow Nanoribbons
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DOI:
10.1021/nn8004922
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发表时间:
2008-10-01
期刊:
影响因子:
17.1
通讯作者:
Lu, Gao Qing
Lu, Gao Qing
中科院分区:
材料科学1区
文献类型:
--
作者:
Chen, Zhi-Gang;Zou, Jin;Lu, Gao Qing

文献摘要

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采用简单的ZnS纳米带模板法制备了新型BN空心纳米带(BNHNR)。这种BNHNR具有独特的结构,并显示出独特的光学性能,如从拉曼,傅里叶变换红外光谱,紫外-可见光谱,和阴极发光光谱,当与其他形式的BN ramostructures相比。由于结晶度高,BNHNR在5.33 eV处表现出非凡的紫外CL发射。这种性质对于光电应用是非常有利的,特别是在紫外区域,例如蓝色激光和发光二极管。这种模板方法也被扩展到合成其他中空ramostructures,如硼碳氮化物。这项研究代表了一种新的方法来制造中空纳米结构具有明确的结晶度和独特的光学性能。
Novel BN hollow nanoribbons (BNHNRs) were fabricated by a simple ZnS nanoribbon templating method. Such BNHNRs have a distinct structure and show unique optical properties, as demonstrated from Raman, Fourier transform infrared spectroscopy, UV-vis spectroscopy, and cathodoluminescence spectroscopy, when compared with other forms of BN ramostructures. With high crystallinity, the BNHNRs exhibit an extraordinary ultraviolet CL emission at 5.33 eV. Such a property is highly advantageous for optoelectronic applications, particularly in the ultraviolet region, such as blue lasing and light emitting diodes. This templating method has also been extended to synthesize other hollow ramostructures such as boron carbonitride. This study represents a new methodology for fabricating hollow nanostructures with defined crystallinity and unique optical properties.