Room-temperature microfluidics packaging using sequential plasma activation process
Room-temperature microfluidics packaging using sequential plasma activation process
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DOI：
10.1109/tadvp.2006.875070
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发表时间：
2006-08-01
影响因子：
--
通讯作者：
Suga, T.
中科院分区：
文献类型：
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作者：
Howlader, M. M. R.;Suehara, S.;Suga, T.
采用氧反应离子刻蚀（RIE）等离子体和氮自由基等离子体的顺序等离子体活化工艺，在室温下进行微流体封装。Si/玻璃和玻璃/玻璃晶片通过氧RIE等离子体随后通过氮微波自由基活化。然后，使活化的晶片在大气压空气中与手动施加的压力接触，其中它们保持24小时。晶片在整个区域上结合，并且界面的结合强度与母体体晶片一样强，而没有任何后退火工艺或湿化学清洁步骤。键合强度显着增加与氮自由基处理后，氧RIE活化键合之前。化学可靠性测试表明，Si/Si的键合界面可以显著耐受各种微流体化学品的暴露。Si/玻璃和玻璃/玻璃腔体形成的顺序等离子体激活过程表示气密密封行为。在等离子体处理后的玻璃晶片中观察到SiOxNy，这归因于氮与Si和氧的结合以及N-2自由基在晶片中的注入。观察到的高结合强度归因于吸收水到晶片表面上的扩散和配对晶片上的氮氧化硅层之间的反应。采用体微机械加工和等离子体键合工艺在玻璃基片上制作了T型微流控通道。
A sequential plasma activation process consisting of oxygen reactive ion etching (RIE) plasma and nitrogen radical plasma was applied for microfluidics packaging at room temperature. Si/glass and glass/glass wafers were activated by the oxygen RIE plasma followed by nitrogen microwave radicals. Then, the activated wafers were brought into contact in atmospheric pressure air with hand-applied pressure where they remained for 24 h. The wafers were bonded throughout the entire area and the bonding strength of the interface was as strong as the parents bulk wafers without any post-annealing process or wet chemical cleaning steps. Bonding strength considerably increased with the nitrogen radical treatment after oxygen RIE activation prior to bonding. Chemical reliability tests showed that the bonded interfaces of Si/Si could significantly withstand exposure to various microfluidics chemicals. Si/glass and glass/glass cavities formed by the sequential plasma activation process indicated hermetic sealing behavior. SiOxNy was observed in the sequentially plasma-treated glass wafer, and it is attributed to binding of nitrogen with Si and oxygen and the implantation of N-2 radical in the wafer. High bonding strength observed is attributed to a diffusion of absorbing water onto the wafer surfaces and a reaction between silicon oxynitride layers on the mating wafers. T-shape microfluidic channels were fabricated on glass wafers by bulk micromachining and the sequential plasma-activated bonding process at room temperature.