Effects of annealing conditions on resistive switching characteristics of SnOx thin films
Effects of annealing conditions on resistive switching characteristics of SnOx thin films
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DOI：
10.1016/j.jallcom.2016.02.215
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发表时间：
2016-07-15
影响因子：
6.2
通讯作者：
Song, Aimin
中科院分区：
文献类型：
--
作者：
Jin, Jidong;Zhang, Jiawei;Song, Aimin
提出了一种基于Al/SnOx/Pt结构的阻变存储器。采用直流溅射法在室温下制备了SnOx薄膜，并进行了不同的沉积后热处理。我们观察到一个显着的改善后，在300摄氏度的氮气退火的双极阻变特性。所获得的存储器件显示出良好的稳定性，具有相对长的保留时间，超过10（5）s。在100次耐久循环的持续时间内，电阻比保持在55以上。一个界面修改的空间电荷限制电流模型提出了一种可能的开关机制。在SnOx薄膜中实现的电阻开关特性似乎是非易失性存储器应用的有希望的候选者。(C)2016爱思唯尔B. V.保留所有权利。
A resistive random-access memory based on an Al/SnOx/Pt structure is demonstrated. The SnOx thin films were prepared by DC sputtering at room temperature and different post-deposition thermal treatments carried out. We observe a significant improvement of bipolar resistive switching characteristics after annealing at 300 degrees C in nitrogen. The obtained memory devices show good stability with a relatively long retention time, exceeding 10(5) s. The resistance ratio remains above 55 within the duration of 100 endurance cycles. An interface modified space-charge-limited-current model is proposed as a possible switching mechanism. The achieved characteristics of the resistive switching in SnOx films seem to be a promising candidate for nonvolatile memory applications. (C) 2016 Elsevier B.V. All rights reserved.