Pressure-Enhanced Interdiffusion in Amorphous Si/Ge Multilayers: Implications for Defect-Mediated Diffusion
Pressure-Enhanced Interdiffusion in Amorphous Si/Ge Multilayers: Implications for Defect-Mediated Diffusion
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DOI：
10.1557/proc-356-15
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发表时间：
1996-02
期刊：
影响因子：
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通讯作者：
S. Theiss;F. Spaepen;M. Aziz
中科院分区：
文献类型：
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作者：
S. Theiss;F. Spaepen;M. Aziz
我们研究了静水压力对非晶Si（2.7 nm）和Ge（3.1 nm）交替层组成的多层膜中互扩散的影响。样品在外部加热的金刚石砧座单元中在420 °C下在0和2.8GPa之间的压力下退火。通过监测由组成调制效应引起的一阶X射线反射强度随退火时间的衰减来测量相互扩散。所有压力的衰减曲线可以通过缩放退火时间来重合。这使得有可能分离的相互扩散的压力的影响，从那些组成和结构松弛。互扩散系数随着压力的增加而增加，其激活体积为−5.0 cm 3/mole，或晶体Si原子体积的−0.42倍。
We have investigated the effect of hydrostatic pressure on interdiffusion in multilayers composed of alternating layers of amorphous Si (2.7 nm) and Ge (3.1 nm). Samples were annealed at 420 °C at pressures between 0 and 2.8 GPa in an externally heated diamond anvil cell. Interdiffusion was measured by monitoring the decay with annealing time of the intensity of the first‐order x‐ray reflection resulting from the effects of composition modulation. The decay curves for all pressures could be made to coincide by scaling the annealing times. This made it possible to separate the effects of pressure on the interdiffusivity from those of composition and structural relaxation. The interdiffusivity increased with applied pressure, with an activation volume of −5.0 cm3/mole, or −0.42 times the atomic volume of crystalline Si.