Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs
复制标题
涉及栅电极的电荷捕获/去捕获对按比例缩小的 MOSFET 噪声电流的重要性
DOI：
10.1109/ted.2022.3147158
复制
发表时间：
2022
影响因子：
3.1
通讯作者：
L. Selmi
中科院分区：
文献类型：
--
作者：
R. Asanovski;P. Palestri;L. Selmi
在对金属 - 氧化物 - 半导体场效应晶体管（MOSFET）的噪声进行建模时，载流子从栅极到电介质陷阱的俘获/去俘获过程常常被忽略，并且据我们所知，尚未有关于其对按比例缩小的器件影响的系统性研究。在本文中，我们表明在如今积极缩小栅极电介质厚度的情况下，这种俘获机制不可忽略，否则在估算漏极电流噪声时会产生高达几个数量级的误差。我们对噪声产生机制进行了分析建模，然后通过对具有不同架构以及沟道/栅极堆叠材料的按比例缩小的MOSFET进行二维和三维技术计算机辅助设计（TCAD）模拟来进行分析。这些结果为技术和器件设计人员提供了新的见解，强调了栅极金属功函数（WF）选择的相关性以及在高栅极电压下价带电子俘获的作用。
Carrier trapping/detrapping from/to the gate into dielectric traps is often neglected when modeling noise in MOSFETs and, to the best of our knowledge, no systematic study of its impacts on scaled devices is available. In this article, we show that this trapping mechanism cannot be neglected in nowadays aggressively scaled gate dielectric thicknesses without causing errors up to several orders of magnitude in the estimation of the drain current noise. The noise generation mechanism is modeled analytically and then analyzed through the use of 2-D and 3-D TCAD simulations of scaled MOSFETs with different architectures and channel/gate-stack materials. The results provide new insights for technology and device designers, highlight the relevance of the choice of the gate metal work function (WF) and the role of valence band electron trapping at high gate voltages.