Determination of band line-up in β-SiC/Si heterojunction for Si-HBT's
Determination of band line-up in β-SiC/Si heterojunction for Si-HBT's
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确定 Si-HBT 的 β-SiC/Si 异质结中的能带排列
DOI：
10.1016/0169-4332(89)90126-8
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发表时间：
1990
影响因子：
6.7
通讯作者：
Takashi Ito
中科院分区：
文献类型：
--
作者：
T. Aoyama;T. Sugii;Takashi Ito
为了确定β-SiC/Si异质结在Si异质结双极晶体管中的应用，我们用光电发射测量了β-SiC/Si异质结的能带不连续性。我们测量了价带不连续性，ΔEv为0.54±0.15 eV。我们计算出导带不连续性ΔEc为0.54 eV。利用这些Δ Ev和Δ Ec值确定了n型β-SiC/p型Si异质结形成时的能带排列。结果，Si中的空穴感觉到的势垒比n型β-SiC中的电子在异质结处感觉到的势垒高约1 eV。这种能带排列对于Si-HBT是有吸引力的，因为Si基极中反向注入SiC发射极的空穴可以忽略不计，从而导致更高的电流增益。
We measured the band discontinuity of the β-SiC/Si heterojunction by photoemission to determine its application to Si-heterojunction bipolar transistors. We measured the valence band discontinuity, ΔEv, as 0.54±0.15 eV. We calculated the conduction band discontinuity, ΔEc, as 0.54 eV. The band line-up was determined using these values of ΔEvand ΔEcwhen the heterojunction of n-type β-SiC/p-type Si was formed. As a result, the holes in Si feel a potential barrier about 1 eV higher than the electrons in the n-type β-SiC feel at the heterojunction. This band line-up is attractive for Si-HBT's because the holes in the Si base reverse-injected into the SiC emitter are negligible, resulting in higher current gain.