Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD
Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD
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DOI：
10.1016/j.jnoncrysol.2006.01.075
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发表时间：
2006-06-15
影响因子：
3.5
通讯作者：
Carreno, M. N. P.
中科院分区：
文献类型：
--
作者：
Oliveira, A. R.;Carreno, M. N. P.
介绍了用PECVD技术制备的a-SiC:H薄膜的低温结晶和反应离子刻蚀（RIE）腐蚀结果。采用FTIR和XRD对结晶过程进行了表征；这些结果显示了晶化的证据，形成立方SiC多晶（3C-SiC）。优化后的沉积a- sic:H薄膜的RIE参数表明，当混合气体中O-2含量为60%时，腐蚀速率最大。在这种情况下，蚀刻速率随射频功率线性增加。增加工艺压力导致单调的蚀刻速率增加，在200-300 mTorr范围内的压力几乎保持不变，最大值为125 nm/min。对于退火薄膜，观察到结晶度对蚀刻速率的强烈影响接近于报道的3C-SiC等离子体蚀刻的值。(c) 2006 Elsevier B.V.版权所有
Crystallization of a-SiC:H films obtained by PECVD technique at low temperatures and results on corrosion by reactive ion etching (RIE) of these films are presented. The crystallization process was characterized by FTIR and XRD analysis; these results show evidences of crystallization with the formation of cubic SiC polycrystals (3C-SiC). The optimized RIE parameters for as-deposited a-SiC:H films indicates a maximum etch rate for 60% O-2 in the gas mixture. With this condition the etch rate increases linearly with the rf power. Increasing process pressures leads to a monotonic etch rate increase, remaining nearly constant at a maximum value of 125 nm/min for pressures in the 200-300 mTorr range. For the annealed films a strong influence of the degree of crystallinity on the etch rate is observed approaching values similar to those reported for 3C-SiC plasma etching. (c) 2006 Elsevier B.V. All rights reserved.