Electron spin resonance observation of the creation, annihilation, and charge state of the 74‐Gauss doublet in device oxides damaged by soft x rays
Electron spin resonance observation of the creation, annihilation, and charge state of the 74‐Gauss doublet in device oxides damaged by soft x rays
复制标题
软 X 射线损伤器件氧化物中 74 高斯双峰的产生、湮灭和电荷状态的电子自旋共振观察
DOI：
--
复制
发表时间：
1987
期刊：
影响因子：
--
通讯作者：
T. Sugano
中科院分区：
文献类型：
--
作者：
Toru Takahashi;B. Triplett;K. Yokogawa;T. Sugano
与E'相关的缺陷称为74高斯双峰，它是由E'与氢反应产生的，并且像E '一样带正电。与相对稳定的E'相反，双重态很容易通过暴露于紫外光而湮灭。这里发现的新的正缺陷似乎是第三顺磁性“三价硅”，显然通常负责硅上热氧化物的损伤和修复。
The E’ related defect called the 74‐Gauss doublet is shown to be produced by reaction of E’ with hydrogen and is positively charged like the E’. The doublet is easily annihilated by exposure to ultraviolet light in contrast to the E’ which is comparatively stable. The new positive defect identified here appears to be the third paramagnetic ‘‘trivalent silicon’’ apparently generally responsible for damage and repair of damage to thermal oxides on silicon.