Ge-Sn semiconductors for band-gap and lattice engineering
Ge-Sn semiconductors for band-gap and lattice engineering
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DOI：
10.1063/1.1515133
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发表时间：
2002-10-14
影响因子：
4
通讯作者：
Kouvetakis, J
中科院分区：
文献类型：
--
作者：
Bauer, M;Taraci, J;Kouvetakis, J
我们描述了 Ge1-xSnx 系统中的一类硅基半导体。氘稳定的锡氢化物为各种高度亚稳态的组合物和结构提供了一条低温途径。完美外延金刚石-立方 Ge1-xSnx 合金直接在 Si(100) 上生长，具有高热稳定性、优异的结晶度以及晶体学和光学特性，例如可调节带隙和晶格常数。这些性质可以通过卢瑟福背散射、低能二次离子质谱、高分辨率透射电子显微镜、X 射线衍射（摇摆曲线）以及红外和拉曼光谱以及光谱椭圆光度术来完全表征。从头算密度泛函理论模拟也用于阐明结构和光谱行为。 (C) 2002 年美国物理研究所。
We describe a class of Si-based semiconductors in the Ge1-xSnx system. Deuterium-stabilized Sn hydrides provide a low-temperature route to a broad range of highly metastable compositions and structures. Perfectly epitaxial diamond-cubic Ge1-xSnx alloys are grown directly on Si(100) and exhibit high thermal stability, superior crystallinity, and crystallographic and optical properties, such as adjustable band gaps and lattice constants. These properties are completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry. Ab initio density functional theory simulations are also used to elucidate the structural and spectroscopic behavior. (C) 2002 American Institute of Physics.