Coupled plasmon‐cyclotron resonance in ultra‐high mobility bulk silicon
Coupled plasmon‐cyclotron resonance in ultra‐high mobility bulk silicon
复制标题
超高迁移率块体硅中的耦合等离激元回旋共振
DOI：
10.1063/1.3295555
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
W. Jantsch
中科院分区：
文献类型：
--
作者：
H. Malissa;Z. Wilamowski;W. Jantsch
我们使用标准X波段EPR谱仪在2.5 K至10 K的温度范围内研究了市售体硅（>1000 Ωcm）中光激发电子的耦合等离子体-回旋共振（CR）。在照明下出现的测量CR信号的线形是具有能量依赖性线中心和线宽度的洛伦兹线的叠加。考虑到等离子体位移对电子浓度的依赖性以及有效质量和动量弛豫时间的能量依赖性的数值方法用于对共振位置和线宽的分布进行去卷积。
We investigate the coupled plasmon‐cyclotron resonance (CR) of photo‐excited electrons in commercially available bulk Si (>1000 Ωcm) using a standard X‐band EPR spectrometer in a temperature range between 2.5 K and 10 K. The line shape of the measured CR signal that appears under illumination is a superposition of Lorentzian lines with energy‐dependent line centers and line widths. A numerical procedure which takes into account the dependence of the plasma shift on electron concentration and the energy‐dependence of effective masses and momentum relaxation times is used to deconvolute the distribution of resonance position and line widths.