Growth of Nanogold at Interfaces between Locally Induced Naked Silicon Surfaces and Pure HAuCl4 Solutions
Growth of Nanogold at Interfaces between Locally Induced Naked Silicon Surfaces and Pure HAuCl4 Solutions
复制标题
纳米金在局部诱导裸露硅表面和纯 HAuCl4 溶液之间界面处的生长
DOI:
10.1149/2.0261614jes
复制
发表时间:
2016
影响因子:
3.9
通讯作者:
Kazuyuki Hirao
中科院分区:
文献类型:
--
作者:
Hiroki Itasaka;Masayuki Nishi;Masahiro Shimizu;Kazuyuki Hirao
We describe and experimentally verify the mechanism of area-selective electroless deposition of gold nanostructures at interfaces between locally induced naked silicon surfaces and pure HAuCl 4 solution. We previously demonstrated that gold nanostructures selectively grow on focused ion beam (FIB)-irradiated areas of a silicon substrate when the substrate is exposed to pure HAuCl 4 solution. We revealed that silicon dangling bonds formed by FIB irradiation reduce Au (III) ions and initiate the nucleation of gold. Here, we focus on the growth stage. Quantitative estimate of the amount of gold grown reveals that silicon dangling bonds explain only a fraction of the total amount of gold. Thus, the growth mechanism is different from the nucleation mechanism. In the growth stage, soon after silicon/gold interfaces form via gold nucleation, electrons in the crystalline silicon near the interfaces reduce Au (III) ions through the interfaces and the growing gold. This mechanism is consistent with the Fermi level (chemical potential of electrons), which decreases in the order silicon> gold> HAuCl 4 solution in the isolated form. Double exposure to the same and different HAuCl 4 solutions shows the results that support the mechanism, and allows further control of gold morphology.