Gatemon qubit based on a thin InAs-Al hybrid nanowire
Gatemon qubit based on a thin InAs-Al hybrid nanowire
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DOI：
10.1088/0256-307x/40/4/047302
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Hao Zhang
中科院分区：
文献类型：
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作者：
Jierong Huo;Zezhou Xia;Zonglin Li;Shan Zhang;Yuqing Wang;Dong Pan;Qichun Liu;Yulong Liu;Zhichuan Wang;Yichun Gao;Jianhua Zhao;Tiefu Li;Jianghua Ying;Runan Shang;Hao Zhang
Abstract. We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time $T_1sim$0.56 μs and the dephasing time $T_2^ sim$0.38 μs. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.
