High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates
High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates
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DOI：
10.1134/1.1766381
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发表时间：
2004-06
期刊：
影响因子：
0.7
通讯作者：
M. Maksimov;Y. Shernyakov;N. V. Kryzhanovskaya;A. Gladyshev;Y. Musikhin;N. Ledentsov;A. Zhukov;A. P. Vasil’ev;A. Kovsh;S. Mikhrin;E. Semenova;N. Maleev;E. Nikitina;V. Ustinov;Z. Alferov
中科院分区：
文献类型：
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作者：
M. Maksimov;Y. Shernyakov;N. V. Kryzhanovskaya;A. Gladyshev;Y. Musikhin;N. Ledentsov;A. Zhukov;A. P. Vasil’ev;A. Kovsh;S. Mikhrin;E. Semenova;N. Maleev;E. Nikitina;V. Ustinov;Z. Alferov
研究了生长在GaAs衬底上的长波长（1.46-1.5 μm）激光器的光电流、光谱和温度特性，其有源区基于InAs-InGaAs量子点。为了达到所需的激光波长，量子点生长在具有约20%的In含量的变质InGaAs缓冲层的顶部上。室温下脉冲模式下的最大输出功率为7 W。具有1.5mm长的腔的激光器的微分效率为50%。在10-73°C的温度范围内，阈值电流的温度依赖性由61 K的特征温度描述。
Light-current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 µm) lasers grown on GaAs substrates, with an active area based on InAs-InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a metamorphic InGaAs buffer layer with an In content of about 20%. The maximum output power in pulsed mode was 7 W at room temperature. The differential efficiency of the laser, which had a 1.5-mm-long cavity, was 50%. The temperature dependence of the threshold current is described by a characteristic temperature of 61 K in the temperature range 10–73°C.