Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n/sup +/-i-p/sup +/-i-n/sup +/ structures
Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n/sup +/-i-p/sup +/-i-n/sup +/ structures
复制标题
MLE 生长的平面掺杂势垒 n/sup /-i-p/sup /-i-n/sup / 结构中通过静态感应机制进行载流子注入
DOI：
10.1109/16.554811
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发表时间：
1997
影响因子：
3.1
通讯作者：
J. Nishizawa
中科院分区：
文献类型：
--
作者：
Y. X. Liu;P. Płotka;K. Suto;Y. Oyama;J. Nishizawa
在77K到423K的温度范围内，测量了源漏距离为500/spl Aring/950/spl Aring/的MLE生长的GaAsn/sup+/-i-n/sup+/二极管结构的I-V特性。实验结果分析表明，电流流过静电感应控制势垒。在此基础上，与假设弹道电子注入的热电子发射理论进行了定量比较。
The I-V characteristics of GaAs n/sup +/-i-p/sup +/-i-n/sup +/ diode structures grown by MLE with source-drain distances from 500 /spl Aring/ to 950 /spl Aring/ have been measured at temperatures ranging from 77 K to 423 K. The analysis of experimental results indicates that the current flows over the static-induction-controlled potential barrier. On this basis, quantitative comparison with thermionic emission theory which assumes injection of ballistic electrons are made.