Development of low resistance electrical contacts for thermoelectric devices based on n-type PbTe and p-type TAGS-85 ((AgSbTe2)0.15(GeTe)0.85)
Development of low resistance electrical contacts for thermoelectric devices based on n-type PbTe and p-type TAGS-85 ((AgSbTe2)0.15(GeTe)0.85)
复制标题
DOI:
10.1088/0022-3727/42/1/015502
复制
发表时间:
2009-01
期刊:
影响因子:
--
通讯作者:
Ajay Singh;S. Bhattacharya;C. Thinaharan;D. K. Aswal;S. Gupta;J. Yakhmi;K. Bhanumurthy
中科院分区:
文献类型:
--
作者:
Ajay Singh;S. Bhattacharya;C. Thinaharan;D. K. Aswal;S. Gupta;J. Yakhmi;K. Bhanumurthy
Diffusion bonded very low resistance electrical contacts (specific contact resistance <10 µΩ cm2) have been developed on n-type PbTe and p-type TAGS-85 ((AgSbTe2)0.15(GeTe)0.85) thermoelements. Thermoelectric devices (TEDs) having two p–n couples in series (each of four elements having 7.5 mm diameter) generated an output power of 1.2 W (at an operating current of ∼17 A) at hot side temperature Th = 500 °C and a temperature difference ΔT = 410 °C. Internal resistance of the devices was found to increase linearly with an increase in the number of thermoelements. The efficiency of developed TEDs was found to be 6%. The devices have been operated continuously for more than 8 months in air without any degradation of the output power.