Pressure-induced isostructural phase transition of metal-doped silicon clathrates
Pressure-induced isostructural phase transition of metal-doped silicon clathrates
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DOI:
10.1103/physrevb.75.012106
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发表时间:
2007-01-01
影响因子:
3.7
通讯作者:
Iitaka, Toshiaki
中科院分区:
文献类型:
--
作者:
Iitaka, Toshiaki
We propose an atomistic model for the pressure-induced isostructural phase transition of metal-doped silicon clathrates Ba8Si46 and K8Si46 that has been observed at 14 and 23 GPa, respectively. The model successfully explains the equation of state, transition pressure, change of Raman spectra, and dependence on the doped cations as well as the effects of substituting Si(6c) atoms with noble metals.