Presidential Young Investigator Award: Investigation of Tunneling Structures in GaAs/GaAIAs

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Quantum mechanical tunneling has always been an interesting phenomenon in semiconductor devices, although the practical utilization of this effect in device applications is limited. Recently with the high degree of crystal interface perfection and the precision growth possible with MBE technology, new and novel tunneling structures can be fabricated. The goal of this research is to characterize and optimize electron transport in tunneling structures. MBE technology will be developed as necessary to optimize this transport. Investigation of novel geometries that could be used as either high speed or opto electric devices will be performed.