Presidential Young Investigator Award: Piezoelectric Voltage Shifts in GaAs MESFET and GE Phototransitor Technologies

将在固态设备和电路领域开展几个项目。研究了外延生长的晶格失配半导体薄层的基本物理和工程应用，其中失配是以弹性应变而不是失配位错(伪形层)来调节的。应用包括高速数字和微波器件以及集成光电子学。对锗/绝缘体系统(特别是Ge/Ge-N)的基本物理和工程应用进行了研究。应用包括用于光电应用和高性能CMOS电路的锗和锗“MOSFET”的钝化。重点研究了用于长波(1.3微米或1.55微米)光通信系统的高速、低成本单片锗光纤接收/放大电路的设计与实现。

Several projects in the areas of solid state devices and circuits will be conducted. Fundamental physics and engineering applications of epitaxially grown thin layers of lattice mismatched semiconductors in which the mismatch is accommodated as elastic strain rather than by misfit dislocations (pseudomorphic layers) are studied. Applications include high speed digital and microwave devices and integrated optoelectronics. Fundamental physics and engineering applications of germanium/insulator systems (especially Ge/Ge N) are examined. Applications include passivation of germanium and germanium "MOSFETs" for optoelectronic applications and high performance CMOS circuits. Attention is focused on the design and implementation of high-speed, low-cost monolithic germanium fiber-optic receiver/amplifier circuits for long wavelength (1.3um or 1.55um) optical communications systems.