Research Initiation Grant: Electron Trapping in Zinc Oxide Varistors

研究启动资助：氧化锌压敏电阻中的电子捕获

• 批准号: 8504272
• 负责人: James Cordaro
• 金额: $ 5.66万
• 依托单位: Alfred University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1985
• 资助国家: 美国
• 起止时间: 1985-07-01 至 1987-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8504272&HistoricalAwards=false
• 关键词: Research; Initiation; Grant; Electron; Trapping

Zinc oxide varistors are commercially important discrete components used for surge protection of electronic circuits and electric machinery. The presence of deep electron traps within the zinc oxide grains could influence the response time by acting as one of the factors which might affect the rate at which the depletion zones surrounding the grain boundaries narrow prior to breakdown. Admittance spectroscopy will be used to characterize trap energy, density, emission rate, and capture cross section on commercial and specially fabricated varistors. The information will be correlated with I-V properties and voltage response times to meet the objective and, additionally, provide an extended understanding of electronic ceramics in general.

氧化锌压敏电阻器是商业上重要的分立元件 用于电子电路和电气设备的浪涌保护 机械. 氧化锌中存在深电子陷阱 颗粒可以影响响应时间， 可能影响消耗区 在击穿之前围绕晶界变窄。 导纳 光谱学将用于表征陷阱能量，密度， 排放率和捕获截面， 制造的变阻器。 这些信息将与I-V相关 性能和电压响应时间，以满足目标， 此外，提供电子陶瓷的扩展理解 梗概.