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First U.S. Conference on GaAs Manufacturing Technology October 30-31, 1986. Orlando, Florida

First U.S. Conference on GaAs Manufacturing Technology October 30-31, 1986. Orlando, Florida
第一届美国砷化镓制造技术会议,1986 年 10 月 30-31 日,佛罗里达州奥兰多
批准号:
8611463
负责人:
Lester Eastman
金额:
$5.1万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1986
资助国家:
美国
项目状态:
已结题
起止时间:
1986-07-01 至 1987-06-03

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中文摘要
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英文摘要
Gallium Arsenide and related compound semiconductors have progressed from the R&D to the production stage where manufacturing efforts are being planned and carried out. The processing of these materials is very different from the processing of Silicon for integrated circuits. This proposal covers a request for support of the First U.S. Conference on GaAs Manufacturing Technology (USCO/GAMT). A substantial group of leaders in the field, representing U.S. industry, universities and government, have met and organized for this conference. Officers have been elected, bylaws have been drawn up, and the time and place have been set (Orlando, Florida, October 30-31, 1986).
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Normal-Incidence Multiple Quantum-Well Infared Detectors
  • 批准号:
    9217579
  • 项目类别:
    Continuing grant
  • 资助金额:
    $0.0万
  • 财政年份:
    1992
  • 负责人:
    Lester Eastman
  • 依托单位:
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