First U.S. Conference on GaAs Manufacturing Technology October 30-31, 1986. Orlando, Florida

第一届美国砷化镓制造技术会议，1986 年 10 月 30-31 日，佛罗里达州奥兰多

• 批准号: 8611463
• 负责人: Lester Eastman
• 金额: $ 5.1万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-07-01 至 1987-06-03
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8611463&HistoricalAwards=false
• 关键词: First; U.S.; Conference; GaAs; Manufacturing

Gallium Arsenide and related compound semiconductors have progressed from the R&D to the production stage where manufacturing efforts are being planned and carried out. The processing of these materials is very different from the processing of Silicon for integrated circuits. This proposal covers a request for support of the First U.S. Conference on GaAs Manufacturing Technology (USCO/GAMT). A substantial group of leaders in the field, representing U.S. industry, universities and government, have met and organized for this conference. Officers have been elected, bylaws have been drawn up, and the time and place have been set (Orlando, Florida, October 30-31, 1986).

砷化镓及相关化合物半导体已从研发阶段进入生产阶段，并正在规划和实施制造工作。 这些材料的加工与集成电路硅的加工有很大不同。 该提案涵盖了对第一届美国砷化镓制造技术会议 (USCO/GAMT) 支持的请求。 代表美国工业界、大学和政府的该领域的众多领导者齐聚一堂并组织了这次会议。 官员已经选出，章程已经起草，时间和地点也已经确定（佛罗里达州奥兰多，1986 年 10 月 30 日至 31 日）。