Comparative Chemical Studies of GaAs Grown from Methyl- Precursors and Etched by Methyl Radicals in OMVPE Reactors

OMVPE 反应器中甲基前体生长和甲基自由基蚀刻 GaAs 的比较化学研究

• 批准号: 8708030
• 负责人: Maria Flytzani-Stephanopoulos
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-08-01 至 1989-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8708030&HistoricalAwards=false
• 关键词: Comparative; Chemical; Studies; GaAs; Grown

The PI plans research aimed at clarifying the chemical steps in the Organometallic Vapor Phase Epitaxial (OMVPE) growth of compounds such as GaAs and AlGaAs used in electronic and optoelectronic devices. This project should result in guidelines for more detailed studies of the chemical kinetics and the reaction mechanisms operative in OMVPE crystal growth. The specific work will involve studies of the effect of methyl radicals on well characterized GaAs and AlGaAs surfaces. The work will be primarily experimental, for example, post-reaction surfaces will be examined by Scanning Electron Microscopy/Energy Dispersive X-ray Analysis (SEM/EDX), etc.

PI计划进行研究，旨在澄清电子和光电设备中使用的化合物(如GaAs和AlGaAs)的有机金属气相外延(OMVPE)生长中的化学步骤。该项目应该为更详细地研究OMVPE晶体生长中的化学动力学和反应机理提供指导方针。具体工作将包括研究甲基自由基对表征良好的砷化镓和铝砷化镓表面的影响。这项工作将主要是实验性的，例如，将通过扫描电子显微镜/能量色散X射线分析(SEM/EDX)等对反应后表面进行检查。