Comparative Chemical Studies of GaAs Grown from Methyl- Precursors and Etched by Methyl Radicals in OMVPE Reactors

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The PI plans research aimed at clarifying the chemical steps in the Organometallic Vapor Phase Epitaxial (OMVPE) growth of compounds such as GaAs and AlGaAs used in electronic and optoelectronic devices. This project should result in guidelines for more detailed studies of the chemical kinetics and the reaction mechanisms operative in OMVPE crystal growth. The specific work will involve studies of the effect of methyl radicals on well characterized GaAs and AlGaAs surfaces. The work will be primarily experimental, for example, post-reaction surfaces will be examined by Scanning Electron Microscopy/Energy Dispersive X-ray Analysis (SEM/EDX), etc.