Comparative Chemical Studies of GaAs Grown from Methyl- Precursors and Etched by Methyl Radicals in OMVPE Reactors

PI计划进行研究，旨在澄清化学步骤， 有机物气相外延（OMVPE）生长 用于电子和电子器件的化合物，如GaAs和AlGaAs， 光电子器件. 该项目将导致 化学动力学详细研究指南 以及OMVPE晶体生长中的反应机理。 具体工作将涉及甲基效应的研究 GaAs和AlGaAs表面上的自由基。 的 工作将主要是实验性的，例如，后反应 将通过扫描电子显微镜检查表面 显微镜/能谱X射线分析（SEM/EDX）等

The PI plans research aimed at clarifying the chemical steps in the Organometallic Vapor Phase Epitaxial (OMVPE) growth of compounds such as GaAs and AlGaAs used in electronic and optoelectronic devices. This project should result in guidelines for more detailed studies of the chemical kinetics and the reaction mechanisms operative in OMVPE crystal growth. The specific work will involve studies of the effect of methyl radicals on well characterized GaAs and AlGaAs surfaces. The work will be primarily experimental, for example, post-reaction surfaces will be examined by Scanning Electron Microscopy/Energy Dispersive X-ray Analysis (SEM/EDX), etc.