Second U.S. Conference on GaAs Manufacturing Technology
Second U.S. Conference on GaAs Manufacturing Technology
批准号:
8714696
负责人:
Daniel Rode
金额:
$4.03万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1987
资助国家:
美国
项目状态:
已结题
起止时间:
1987-08-15 至 1988-07-31
中文摘要
砷化镓和相关化合物半导体已经从研发阶段发展到生产阶段,正在计划和实施制造工作。这些材料的加工与集成电路用硅的加工有很大的不同。该提案涵盖了第二届美国GaAs制造技术会议的支持请求。代表美国工业界、大学和政府的一大批该领域的领导人将出席这次会议。本次会议将于10月12日至14日在俄勒冈州波特兰举行。这次会议代表了将大学制造研究与工业制造工程相结合的尝试。NSF对这种互动作用的支持是极其重要的。
英文摘要
Gallium Arsenide and related compound semiconductors have progressed from the R&D to the production stage where manufacturing efforts are being planned and carried out. The processing of these materials is very different from the processing of Silicon for integrated circuits. This proposal covers a request for support of the Second U.S. Conference on GaAs Manufacturing Technology. A substantial group of leaders in the field, representing U.S. industry, universities and government, will meet at this conference. This conference will take place October 12-14 at Portland, OR. This conference represents an attempt to integrate university based manufacturing studies with industrial manufacturing engineering efforts. NSF support of this interactive role is extremely important.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Eighth and Ninth U.S. Conference On GaAs Manufacturing Technology, May 16-19, 1993 in Atlanta, GA and May 2-5, 1994in Las Vegas, Nevada
-
批准号:9224883
-
项目类别:Standard Grant
-
资助金额:$2.0万
-
财政年份:1992
-
负责人:Daniel Rode
-
依托单位:
Sixth U. S. Conference on GaAs Manufacturing Technology
-
批准号:9106191
-
项目类别:Standard Grant
-
资助金额:$4.25万
-
财政年份:1991
-
负责人:Daniel Rode
-
依托单位:
1989 U.S. Conference on GaAs Manufacturing Technology October 1989
-
批准号:8819518
-
项目类别:Standard Grant
-
资助金额:$5.4万
-
财政年份:1988
-
负责人:Daniel Rode
-
依托单位:
海外基金