Second U.S. Conference on GaAs Manufacturing Technology

第二届美国砷化镓制造技术会议

• 批准号: 8714696
• 负责人: Daniel Rode
• 金额: $ 4.03万
• 依托单位: Washington University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-08-15 至 1988-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8714696&HistoricalAwards=false
• 关键词: Second; U.S.; Conference; GaAs; Manufacturing

Gallium Arsenide and related compound semiconductors have progressed from the R&D to the production stage where manufacturing efforts are being planned and carried out. The processing of these materials is very different from the processing of Silicon for integrated circuits. This proposal covers a request for support of the Second U.S. Conference on GaAs Manufacturing Technology. A substantial group of leaders in the field, representing U.S. industry, universities and government, will meet at this conference. This conference will take place October 12-14 at Portland, OR. This conference represents an attempt to integrate university based manufacturing studies with industrial manufacturing engineering efforts. NSF support of this interactive role is extremely important.

砷化镓和相关化合物半导体已经从研发阶段发展到生产阶段，正在计划和实施制造工作。这些材料的加工与集成电路用硅的加工有很大的不同。该提案涵盖了第二届美国GaAs制造技术会议的支持请求。代表美国工业界、大学和政府的一大批该领域的领导人将出席这次会议。本次会议将于10月12日至14日在俄勒冈州波特兰举行。这次会议代表了将大学制造研究与工业制造工程相结合的尝试。NSF对这种互动作用的支持是极其重要的。