Equipment: A Study of the Effect of Pulse Modulation on Microwave Plasma Etching

设备：脉冲调制对微波等离子蚀刻效果的研究

• 批准号: 8811786
• 负责人: John Gahl
• 金额: $ 8万
• 依托单位: University of New Mexico
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-07-01 至 1990-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8811786&HistoricalAwards=false
• 关键词: Equipment; Study; Effect; Pulse; Modulation

The objective of the Research Initiation Award is to investigate the use of variably pulsed microwave plasma sources for the anisotropic etching of silicon. We plan to show that the modulation of pulse length and duty cycle can effect etching characteristics such as etch selectivity between Si and Si02 and vertical and lateral etch rates. We plan to show that a pulsed discharge can maintain an etch rate similar to that of a continuous discharge with the resulting benefit of a reduced average power consumption. the proposed research is intended to improve the etching characteristics of microwave plasma sources and improve the understanding of the surface chemistry that takes place within these devices.

研究启动奖的目的是调查 利用脉冲微波等离子体源进行各向异性 硅的蚀刻。 我们计划证明脉冲调制 长度和占空比可以影响蚀刻特性 Si和SiO2之间的选择性以及垂直和横向蚀刻速率。 我们计划证明脉冲放电可以保持蚀刻速率 类似于连续放电， 降低平均功耗。 拟议的研究是 旨在改善微波等离子体的蚀刻特性， 来源和提高对表面化学的理解， 发生在这些设备中。