Experimental Bond Energies in Tetrahedrally Coordinated Semiconductors

这项资助是为了更新马凯特大学的一个高效研究项目（DMR-8701160），该项目在化合物半导体材料的热力学性质领域产生了几篇科学论文和研究生。此外，本科生也参与了这项研究，从而吸引了有前途的学生毕业后从事科学和工程研究和教学工作。本资助期间的研究重点是对锗、硅和碲化汞中取代受体锌和镉的化学键能的实验测定。锌和镉在含硅或含锗受体掺杂剂的固溶体上的分压是用空心阴极灯从气相的光学吸光度来测定的。化学势、偏摩尔焓和偏摩尔熵由数据确定。同样，对汞和碲化镉锌也测定了相同的热力学参数。除了研究之外，该项目还通过培养这门关键科学的研究生和本科生，对基础设施产生了重大影响。

This grant is for the renewal of a highly productive research program at Marquette University (DMR-8701160), which resulted in several scientific papers and graduate students in the area of thermodynamic properties of compound semiconductor materials. In addition, undergraduate students were involved with the research thereby attracting promising students to graduate careers in science and engineering research and teaching. The research during this grant period emphasizes experimental determination of chemical bond energies of the substitutional acceptors, zinc and cadmium, in germanium, silicon, and mercury-telluride. The partial pressure of zinc and cadmium over solid solutions in silicon or germanium-containing acceptor dopants is being determined from the optical absorbance of the vapor phase using hollow cathode lamps. The chemical potential and partial molar enthalpy and entropy are determined from the data. Likewise the same thermodynamic parameters are being determined for mercury and cadmium zinc telluride. In addition to the research, the program has a significant impact on the infrastructure by training students at both the graduate and undergraduate levels in this critical science.