Surface-Induced Quantum Wire Nanostructure Incorporated IntoMultiple Quantum Well Optical Waveguides

提出了一种新型表面超晶格的制备方法，这种超晶格将与多个量子阱结合在一起，沿半导体表面形成量子线。量子线通常被认为具有巨大的潜力，可以改善几种光学器件的性能，但由于量子线极难制造，目前这些结构的实验实现受到限制。将研究GaAlAs多量子阱样品，首先使用几种新的方法来形成量子线，即：(1)电场诱导量子线，(2)应变诱导量子线，(3)用聚焦离子束过程形成的量子线。理论建模将用于确定实验制造的结构可以提供二维量子约束的程度。将制作量子线样品，并使用许多光学技术来表征材料，包括光致发光，以实验验证二维量子约束的存在。

An investigation is proposed for the fabrication of novel surface superlattices which will combine with multiple quantum wells to form quantum wires along a semiconductor surface. Quantum wires are generally expected to have enormous potential for improving th performance of serveral optical devices, but currently the experimental realization of these structures has been limited because quantum wires are extremely difficult to fabricate. GaAlAs multiple quantum well samples will be investigated, first using several novel approaches to forming quantum wires, namely (1) electric field-induced quantum wires, (2) strain-induced quantum wires, and (3) quantum wires formed with a focussed ion beam process. Theoretical modeling will be used to determine the extent to which the experimentally fabricated structures can provide two-dimensional quantum confinement. Quantum wire samples will be fabricated and a number of optical techniques will be used to characterize the material including photolumineescence to experimentally verify the presence of two dimensional quantum confinement.