Optical Studies of Electronic States, Vibrations and Relaxation Processes in Amorphous Systems

非晶系统中电子态、振动和弛豫过程的光学研究

• 批准号: 9014977
• 负责人: Jan Tauc
• 金额: $ 23万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-11-15 至 1993-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9014977&HistoricalAwards=false
• 关键词: Optical; Studies; Electronic; States; Vibrations

This research project is concerned with the study of the photoelectronic properties of hydrogenated amorphous silicon and related semiconductors continuing previous work in three general directions. These are: 1) electrons in states at and above the mobility edge using the optical time-of-flight method developed by the researcher with the objective of understanding the nature of the extended states in these materials; 2) the time of evolution of photoinduced infrared spectra in the femto- and picosecond ranges to understand the ultrafast carrier dynamics of carrier trapping of gap states and electron-lattice relaxation; 3) using steady-state photomodulation spectroscopy to study the gap states of high quality hydrogenated amorphous germanium which has recently become available. This latter technique will also be extended to hydrogenated amorphous silicon doped with phosphorous.

这个研究项目是关于 氢化非晶硅的光电性能， 相关半导体继续以前的工作在三个一般 方向 这些是：1）处于和高于 流动性边缘使用的光学飞行时间的方法开发 研究人员的目的是了解 这些材料中的扩展状态; 2）时间 光致红外光谱在飞秒和 皮秒范围，以了解超快载波动力学 带隙态的载流子俘获和电子-晶格弛豫; 3)使用稳态光调制光谱学来研究 高质量氢化非晶锗的带隙态， 最近已经可以使用了。 后一种技术也将 可以扩展到氢化非晶硅， 磷。