Optical Studies of Electronic States, Vibrations and Relaxation Processes in Amorphous Systems

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This research project is concerned with the study of the photoelectronic properties of hydrogenated amorphous silicon and related semiconductors continuing previous work in three general directions. These are: 1) electrons in states at and above the mobility edge using the optical time-of-flight method developed by the researcher with the objective of understanding the nature of the extended states in these materials; 2) the time of evolution of photoinduced infrared spectra in the femto- and picosecond ranges to understand the ultrafast carrier dynamics of carrier trapping of gap states and electron-lattice relaxation; 3) using steady-state photomodulation spectroscopy to study the gap states of high quality hydrogenated amorphous germanium which has recently become available. This latter technique will also be extended to hydrogenated amorphous silicon doped with phosphorous.