Low Energy Electron Transport in Semiconductor Materials

半导体材料中的低能电子传输

• 批准号: 9024655
• 负责人: William Williamson
• 金额: $ 4.89万
• 依托单位: University of Toledo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-03-01 至 1992-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9024655&HistoricalAwards=false
• 关键词: Low; Energy; Electron; Transport; Semiconductor

An existing Monte Carlo electron transport code (WETRAN) will be extended into a time dependent low energy three dimensional transport code. The code must also be extended so it can transport electrons in semiconductor elements other than silicon, and composite semiconductor materials. A revised routine to describe secondary Auger production will be written. Extension to vector and multitasking machines will be studied. The code will require extensive electron differential and total cross section data bases. The data base will be used to predict the energy dependent probabilities for various events which can occur during the transport process. Elastic cross sections will be computed using the optical model, preliminary inelastic core ionizations by the Coulomb-Born approximation, and valence excitations using the dielectric function method which includes electron-hole, and plasmon excitations.

将现有的蒙特卡罗电子输运码（WETRAN）扩展为随时间变化的低能三维输运码。该代码还必须扩展，以便它可以在硅以外的半导体元件和复合半导体材料中传输电子。将编写一个修订的程序来描述二次螺旋钻的生产。扩展到向量机和多任务机将被研究。该代码将需要广泛的电子微分和总横截面数据库。该数据库将用于预测在传输过程中可能发生的各种事件的能量相关概率。弹性截面将使用光学模型计算，通过库仑-玻恩近似计算初步的非弹性核电离，以及使用介电函数方法计算价态激发，其中包括电子-空穴和等离子激元激发。