Low Energy Electron Transport in Semiconductor Materials

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An existing Monte Carlo electron transport code (WETRAN) will be extended into a time dependent low energy three dimensional transport code. The code must also be extended so it can transport electrons in semiconductor elements other than silicon, and composite semiconductor materials. A revised routine to describe secondary Auger production will be written. Extension to vector and multitasking machines will be studied. The code will require extensive electron differential and total cross section data bases. The data base will be used to predict the energy dependent probabilities for various events which can occur during the transport process. Elastic cross sections will be computed using the optical model, preliminary inelastic core ionizations by the Coulomb-Born approximation, and valence excitations using the dielectric function method which includes electron-hole, and plasmon excitations.