Presidential Young Investigator Award: Quantitative Measurement of Point Defects Introduced by Phosphorus Implantation into Silicon

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This PYI award will be used to pursue research into the novel area of ion implantation induced amorphization and subsequent solid phase epitaxial growth of compound semiconductors and heterocompositional compound semiconductor interfaces. Solid state diffusion limitations account for observation of both the larger scale growth front instabilities and the small scale (10- 15A) discrete aggregative type growth during solid phase epitaxy of GaAs. These solid phase growth characteristics represent a departure from the two dimensional Frank van der Merwe type growth associated with solid phase epitaxial growth of elemental semiconductors. With a new JEOL 4000FX high resolution the P.I. will TEM with full image processing, study the layer by layer solid phase epitaxial growth process in situ.