(A1,Ga)Sb Alloys and GaSb/A1Sb Multiple Quantum Wells for Infrared Optoelectronic Device Applications

用于红外光电器件应用的 (A1,Ga)Sb 合金和 GaSb/A1Sb 多量子阱

• 批准号: 9113563
• 负责人: Malvin Teich
• 金额: $ 34万
• 依托单位: Columbia University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1994-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9113563&HistoricalAwards=false
• 关键词: A1; Ga; Sb; Alloys; GaSb

In this program various devices based on the AlGaSb material system for optical source and detector applications will be studied. Various (Al,Ga)Sb based on photodetectors structures including MSM (metal-semiconductor-metal), PIN, SAGM (Separate absorption graded and multiplication), etc., will be fabricated and characterized. In this area preliminary results have been very encouraging. Record breakdown voltages (6V) for molecular beam epitaxial (MBE) grown PIN diodes without surface passivation have already been obtained, and it is expected that significant progress will be made by pursuing a more comprehensive program. In addition to detectors, GaSb/AlSb quantum well optical modulators and quantum well lasers will be studied along with the integration of PIN and MSM detectors with the n- and p-channel FETs based on AlSb/InAs/GaSb. The optimal MBE conditions for the material growth will be established through reflection high energy electron diffraction (RHEED) and Auger electron spectroscopy. The structural properties of the materials will be characterized by x-ray diffraction. The electrical and optical properties will be characterized Hall measurements and photoluminescence. Finally, GaSb MSM, PIN, avalanche and SAGM photodetectors will be fabricated and characterized.

在这个程序中，各种设备基于 用于光源的AlGaSb材料系统和 将研究探测器的应用。 各种 (Al基于光电探测器结构的 包括MSM（金属-半导体-金属）， PIN，SAGM（单独的吸收分级和 乘法）等，将被捏造， 表征了 这方面的初步成果 都非常鼓舞人心 记录细分 电压（6V）分子束外延 (MBE)无表面生长PIN二极管 已经获得了钝化，它 预计将取得重大进展， 通过追求更全面的 程序. 除了探测器外，GaSb/AlSb 量子阱光调制器和量子 将沿着研究阱激光器 PIN和MSM探测器与 n沟道和p沟道FET基于 AlSb/InAs/GaSb。 材料的最佳MBE条件 成长将通过反思来建立 高能电子衍射（RHEED）和 俄歇电子能谱。 结构性 材料的特性将被表征 通过X射线衍射。 电学和光学 属性将被表征大厅 测量和光致发光。 最后， GaSb MSM、PIN、雪崩和SAGM 将制造光电探测器， 表征了