Presidential Young Investigators Award

总统青年研究员奖

• 批准号: 9158036
• 负责人: Kelin Kuhn
• 金额: $ 31.25万
• 依托单位: University of Washington
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9158036&HistoricalAwards=false
• 关键词: Presidential; Young; Investigators; Award

It is generally believed that increasing the lattice mismatch beyond the point of pseudomorphic growth (thus creating dislocations in the structure) renders the material useless for electronic devices. I am currently investigating the possibility that this belief may not be correct and that in some systems, it may be greatly advantageous to increase the lattice-mismatch past the point of pseudomorphic growth. Currently, I am collaborating with two other Professors one from UW Physics, x-ray diffraction and the other from ASU, Physics, electron microscopy on a long term project to theoretically and experimentally investigate strain relaxation in near- and over-critical thickness InGaAs quantum wells and thin films, as well as in naturally and artificially-graded quantum wells and thin films.

人们普遍认为，在伪晶生长点之外增加晶格错配（从而在结构中产生位错）会使材料在电子器件中无用。我目前正在研究这种信念可能不正确的可能性，并且在某些系统中，增加晶格不匹配超过伪晶生长点可能是非常有利的。目前，我正在与另外两位教授合作，一位来自华盛顿大学物理系，研究x射线衍射，另一位来自亚利桑那州立大学物理系，从理论上和实验上研究近临界厚度和过临界厚度InGaAs量子阱和薄膜，以及自然和人工梯度量子阱和薄膜中的应变松弛。