Presidential Young Investigators Award

一般认为，增加晶格 假晶点外失配 生长（从而在结构中产生位错） 使得该材料对电子设备无用。 我正在调查这件事的可能性 信念可能是不正确的，在某些系统中， 可能非常有利的是， 过赝配点晶格失配 增长 目前，我正在与两个 其他教授一名来自UW物理学，X射线 衍射和其他从亚利桑那州立大学，物理， 电子显微镜的长期项目， 理论和实验研究应变 近临界和超临界厚度弛豫 InGaAs量子威尔斯和薄膜，以及在 自然和人工分级的量子威尔斯阱， 薄膜

It is generally believed that increasing the lattice mismatch beyond the point of pseudomorphic growth (thus creating dislocations in the structure) renders the material useless for electronic devices. I am currently investigating the possibility that this belief may not be correct and that in some systems, it may be greatly advantageous to increase the lattice-mismatch past the point of pseudomorphic growth. Currently, I am collaborating with two other Professors one from UW Physics, x-ray diffraction and the other from ASU, Physics, electron microscopy on a long term project to theoretically and experimentally investigate strain relaxation in near- and over-critical thickness InGaAs quantum wells and thin films, as well as in naturally and artificially-graded quantum wells and thin films.