A Low-Leakage Gallium Phosphide Particle Detector

低泄漏磷化镓粒子探测器

• 批准号: 9160281
• 负责人: Sandra Collins
• 金额: $ 5万
• 依托单位: AstroPower, Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-01-01 至 1992-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9160281&HistoricalAwards=false
• 关键词: Low; Leakage; Gallium; Phosphide; Particle

Epitaxial gallium phosphide (GaP) will be studied as a promising new material for the manufacture of particle detectors. Due to a high indirect bandgap and exceptional crystalline quality, epitaxial gallium phosphide detectors will provide superior performance in high-temperature, high- radiation environments. Extremely low reverse saturation current and good signal-to-noise ratios are expected from gallium phosphide detectors. This Phase I program will apply a systematic approach to demonstrate the capabilities of epitaxial GaP detectors. A comprehensive study of intrinsic and compensated high resistivity epitaxial gallium phosphide layers and PN detectors will be performed. A novel device design intended to extend the high energy collection efficiency of an epitaxial particle detector will be proven. The Phase II program will further develop and optimize this device as well as develop a technology to economically produce millimeter thick epitaxial layers of high resistivity detector grade gallium phosphide.

外延磷化镓（GaP）将作为一种有前途的新材料来研究，用于制造粒子探测器。 由于高间接带隙和卓越的晶体质量，外延磷化镓探测器将在高温、高辐射环境中提供卓越的性能。 磷化镓探测器预计具有极低的反向饱和电流和良好的信噪比。 该第一阶段计划将采用系统方法来展示外延 GaP 探测器的功能。 将对本征和补偿高电阻率外延磷化镓层和 PN 探测器进行全面研究。 旨在扩展外延粒子探测器高能量收集效率的新颖设备设计将得到验证。 第二阶段计划将进一步开发和优化该设备，并开发一种经济地生产毫米厚的高电阻率探测器级磷化镓外延层的技术。