A Low-Leakage Gallium Phosphide Particle Detector

外延磷化镓（GaP）是一种极具发展前景的新型粒子探测器材料。由于高间接带隙和卓越的晶体质量，外延磷化镓探测器将在高温，高辐射环境中提供卓越的性能。极低的反向饱和电流和良好的信噪比期望从磷化镓探测器。这个第一阶段的计划将应用一个系统的方法来展示外延型GaP探测器的能力。本征和补偿高电阻外延磷化镓层和PN探测器的全面研究将进行。一种新的装置设计旨在延长高能量收集效率的外延粒子探测器将被证明。二期项目将进一步开发和优化该器件，并开发一种技术，以经济地生产高电阻率探测器级磷化镓的毫米厚外延层。

Epitaxial gallium phosphide (GaP) will be studied as a promising new material for the manufacture of particle detectors. Due to a high indirect bandgap and exceptional crystalline quality, epitaxial gallium phosphide detectors will provide superior performance in high-temperature, high- radiation environments. Extremely low reverse saturation current and good signal-to-noise ratios are expected from gallium phosphide detectors. This Phase I program will apply a systematic approach to demonstrate the capabilities of epitaxial GaP detectors. A comprehensive study of intrinsic and compensated high resistivity epitaxial gallium phosphide layers and PN detectors will be performed. A novel device design intended to extend the high energy collection efficiency of an epitaxial particle detector will be proven. The Phase II program will further develop and optimize this device as well as develop a technology to economically produce millimeter thick epitaxial layers of high resistivity detector grade gallium phosphide.