Physics of Strong Disorder and Correlation

强无序与相关物理学

• 批准号: 9216007
• 负责人: Patrick Lee
• 金额: $ 23.4万
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-01-01 至 1996-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9216007&HistoricalAwards=false
• 关键词: Physics; Strong; Disorder; Correlation

In this renewal grant theoretical research will focus on the effects of strong disorder and correlation in electron systems. New results have been obtained for the fractional quantized Hall state, particularly in confined geometry. The overlap factor which appears in tunnelling measurements has been calculated and the possible existence of a Fermi liquid state at half filling has been explored. The new work will build on this past work to further study the properties of edge channels and the Aharonov-Bohm effect in the fractional quantized Hall regime. %%% Theoretical research will be done on the fundamental properties of the fractional quantized Hall state - a new state of matter exhibited by two-dimensional electron gases. This special state of matter is usually obtained at semiconductor interfaces in strong magnetic fields. The effects of strong disorder and correlation among the electrons will be studied. While contributing to basic condensed matter physics, there may be wider ramifications of this work in microelectronics.

在这个更新基金的理论研究将集中在电子系统的强无序和相关的影响。分数量子化霍尔态得到了新的结果，特别是在受限几何中。计算了隧道测量中出现的重叠因子，并探讨了半填充时费米液态存在的可能性。新的工作将建立在过去的工作基础上，进一步研究分数量子化霍尔区边缘通道和Aharonov-Bohm效应的性质。将对分数量子化霍尔态的基本性质进行理论研究，这是二维电子气体所表现出的一种新的物质状态。这种物质的特殊状态通常在强磁场中的半导体界面处获得。研究了电子间的强无序性和相关性的影响。在为基本凝聚态物理做出贡献的同时，这项工作在微电子领域可能会有更广泛的影响。