Presidential Faculty Fellow Award: A Multidisciplinary Approach to IC Process Modeling Using the SUPREM-IV ModelingTool

法 这项多学科研究的重点是点缺陷行为的硅模型的发展，这是至关重要的理解掺杂剂扩散。 模型正在开发和参数化的硅化和应力点缺陷动力学的影响。 这些模型，然后在SUPREM-IV，一个标准的集成电路工艺建模工具，利用先进的有限元技术。 这是一个总统教职研究员（PFF）奖最初授予财政年度1992年。

Law This multidisciplinary research focuses on the development of silicon models for point defect behavior, which are vital to understanding dopant diffusion. Models are being developed and parameterized for the effect of silicidation and stress on point defect kinetics. These models are then implemented in SUPREM-IV, a standard integrated circuit process modeling tool that utilizes advanced finite element techniques. This is a Presidential Faculty Fellow (PFF) Award initially awarded in Fiscal Year 1992.