Presidential Faculty Fellow Award: A Multidisciplinary Approach to IC Process Modeling Using the SUPREM-IV ModelingTool

这项多学科的研究集中于硅点缺陷行为模型的发展，这对理解掺杂扩散至关重要。硅化作用和应力对点缺陷动力学的影响的模型正在开发和参数化。这些模型随后在Suprem-IV中实现，Suprem-IV是一种利用先进有限元技术的标准集成电路工艺建模工具。这是总统学院院士(PFF)奖，最初颁发于1992财政年度。

Law This multidisciplinary research focuses on the development of silicon models for point defect behavior, which are vital to understanding dopant diffusion. Models are being developed and parameterized for the effect of silicidation and stress on point defect kinetics. These models are then implemented in SUPREM-IV, a standard integrated circuit process modeling tool that utilizes advanced finite element techniques. This is a Presidential Faculty Fellow (PFF) Award initially awarded in Fiscal Year 1992.