NSF Young Investigator: Novel Optoelectronic Devices Based on III-IV Semiconductor Heterostructures

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A programs of research to study novel optoelectronic devices based on II-V semiconductor heterostructures is described. The devices include quantum cylinder surface emitting lasers, MSM photodetectors, and quantum well inter-subband transition-based devices. The research includes a component for the study of new, wide band gap photonic materials. The materials system to be studied is based on the III-V nitrides, with (in,Ga,Al)N as an example.