Experimental Investigation of Hot Filament Activated Chemical Vapor Deposition

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Erdogen Gulari 9301386 This is a Small Grant for Exploratory Research (SGER). It is concerned with the use of hot filament chemical vapor deposition (HFCVD) to deposit high-purity films of nitrides of titanium, gallium, and boron. In this technique a hot tungsten filament is used to decompose ammonia; the unstable nitrogen-containing radicals then react with a vapor-phase form of the desired metal or metalloid to deposit a thin film of nitride on a semiconductor substrate (silicon in this study). Composition, microstructure, optical properties, and electrical properties of deposited films are studied. Films are characterized using X-ray photoelectron spectroscopy, atomic force microscopy, electron microscopy, X-ray diffraction, Rutherford backscattering, photoluminescence, and electron/hole mobility. The gas phase chemistry of the method is studied through experimental measurements and theoretical modelling. The materials produced in this study have potential for a variety of microelectronic applications, from insulators to LEDs to high- temperature applications. Reliable methods for producing high- quality thin films of materials are badly needed.