Research Initiation Award: Smart Spatial Light Modulators based on Amorphous Semiconductor Multilayer Structures.

WPC 2美元 B p z $ 10 cpi #|X m x 6 x @ 8; X@ HP LaserJet Series II HPLASEII.PRS X @ , t 0 OpX@C10cpi行式打印机16.67cpi 2 X v F ` ? x x x， m x 6 x @ 8; X@ k + H H H， H H @ ; @ D：5 F 7 D@F B 3. 0 j : F D B@ : . ^ 第四章： ：D个 F@B . 3 0 ^ 9308251 Neifeld智能SLM对下一代光学计算和处理极为重要。 这类器件代表了实现互连、神经网络、图像处理和其他形式的并行光学计算的技术。 本提案讨论了使用 ? Si：H/a Si X C 1 x ：H多层膜作为光调制器，其与Si VLSI兼容，并且因此可以与复杂的处理电子器件集成，以产生提供可见波长操作、高速、广泛功能和简单、廉价制造要求的智能SLM。 初步的努力已经产生的证据表明，束缚态量子化将发生在非晶半导体材料系统将进行调查。 将生产高质量的组成材料和界面。 通过样品沉积和表征，将优化制造参数。 其次，将制造多层结构以优化调制器特性。 该组件涉及MQW样本的表征，使得可以分析量化效应，特别是带尾状态的效应。 第三，技术将开发这些调制器与CMOS VLSI集成。 这最后一个组成部分将集中在现有的CMOS电子电路上制造非晶半导体调制器所需的实验技术，并将利用MOSIS设施提供超大规模集成电路寻址电路。

WPC 2 $ B P Z $ Courier 10cpi #| x Õm x 6 X @ 8 ; X @ HP LaserJet Series II HPLASEII.PRS x @ , t 0 OpX @Courier 10cpi Line Printer 16.67cpi 2 X V F ` ? x x x , Õm x 6 X @ 8 ; X @ k + H H H , H H @ ; @ D : 5 F 7 D @ F B 3 . 0 j : F D B @ : . ^ 4 : : D F @ B . 3 0 ^ 9308251 Neifeld Smart SLMs are extremely important to the next generation of optical computing and processing. This class of device represents the enabling technology for the realization of interconnects, neural networks, image processing and other forms of parallel optical computing. This proposal discusses the use of a ? Si:H/a Si x C 1 x :H multilayers as optical modulators which are compatible with Si VLSI and can therefore be integrated with sophisticated processing electronics to yield smart SLMs offering visible wavelength operation, high speed, broad functionality and simple, inexpensive fabrication requirements. Initial efforts have produced evidence that bound state quantization will occur in amorphous semiconductor material system will be investigated. High quality constituent materials and interfaces will be produced. Through sample deposition and characterization fabrication parameters will be optimized. Second, multilayer structures will be fabricated to optimize modulator characteristics. This component involves characterization of MQW samples so that quantization effects and in particular the effects of band tail states, may be analyzed. Third, techniques will be developed to integrate these modulators with CMOS VLSI. This last component will focus on experim ental techniques necessary to fabricate amorphous semiconductor modulators on existing CMOS electronic circuits and will make use of the MOSIS facility to provide VLSI addressing circuits.