RESEARCH INITIATION AWARD: The Relation Between Metal Film Noise and Electromigration Reliability

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9309457 Head This project expand research into the development of excess noise as a reliability testing technique for the Electromigration Resistance of VLSI intercourse. The "noise" referred to in this context is the frequency dependent voltage fluctuations which occur when a DC current is passed through a resistive device. The physical characteristics which influence the noise in the metal film "resistor" or interconnect are typically those which also influence the interconnect's susceptibility to damage from Electromigration. By relating the level of noise in metal film interconnects and to the lifetime of the films and perfecting the noise measurement testing techniques, the use of noise measurements as an enhanced reliability tool can be transferred to the industrial environment. ***