RESEARCH INITIATION AWARD: The Relation Between Metal Film Noise and Electromigration Reliability

研究启动奖：金属膜噪声与电迁移可靠性之间的关系

• 批准号: 9309457
• 负责人: Linda Head
• 金额: $ 10万
• 依托单位: SUNY at Binghamton
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-08-15 至 1996-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9309457&HistoricalAwards=false
• 关键词: RESEARCH; INITIATION; AWARD; Relation; Between

9309457 Head This project expand research into the development of excess noise as a reliability testing technique for the Electromigration Resistance of VLSI intercourse. The "noise" referred to in this context is the frequency dependent voltage fluctuations which occur when a DC current is passed through a resistive device. The physical characteristics which influence the noise in the metal film "resistor" or interconnect are typically those which also influence the interconnect's susceptibility to damage from Electromigration. By relating the level of noise in metal film interconnects and to the lifetime of the films and perfecting the noise measurement testing techniques, the use of noise measurements as an enhanced reliability tool can be transferred to the industrial environment. ***

9309457 Head本项目扩大了对超大规模集成电路（VLSI）互连电迁移电阻可靠性测试技术的研究。在这种情况下提到的“噪声”是当直流电流通过电阻器件时发生的频率相关电压波动。影响金属膜“电阻器”或互连中的噪声的物理特性通常也会影响互连对电迁移损坏的易感性。通过将金属膜互连中的噪声水平与薄膜的寿命联系起来，并完善噪声测量测试技术，可以将噪声测量作为增强可靠性的工具转移到工业环境中。＊＊＊