RESEARCH INITIATION AWARD: The Relation Between Metal Film Noise and Electromigration Reliability

9309457 Head该项目扩展了开发过量噪声作为VLSI互连电迁移电阻可靠性测试技术的研究。这里所说的“噪声”是指直流电流通过阻性器件时产生的频率相关的电压波动。影响金属膜“电阻”或互连线中噪声的物理特性通常也影响互连线对电迁移损伤的敏感性。通过将金属薄膜互连中的噪声水平与薄膜的寿命联系起来，并完善噪声测量测试技术，可以将噪声测量作为一种增强可靠性的工具转移到工业环境中。***

9309457 Head This project expand research into the development of excess noise as a reliability testing technique for the Electromigration Resistance of VLSI intercourse. The "noise" referred to in this context is the frequency dependent voltage fluctuations which occur when a DC current is passed through a resistive device. The physical characteristics which influence the noise in the metal film "resistor" or interconnect are typically those which also influence the interconnect's susceptibility to damage from Electromigration. By relating the level of noise in metal film interconnects and to the lifetime of the films and perfecting the noise measurement testing techniques, the use of noise measurements as an enhanced reliability tool can be transferred to the industrial environment. ***