RESEARCH INITIATION AWARD: Growth and Characterization of High-Purity Silicon-Based Heterojunction Devices Grown by Low-Temperature Chemical Vapor Deposition

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9309678 Schwartz The objective of this proposal are to advance the electronic and optoelectronic properties of Si1-xGex devices grown by low temperature vapor deposition (LTCVD) and to extend the use of LTCVD to grow SiC on silicon. The epitaxial reactor will be constructed to grow high-purity silicon-based heterojunctions with layer resolutions of 10nm or less. The electronic and optoelectronic characteristic of the Si1-xGex material will be characterized with an emphasis on the optoelectronic properties. By exploiting the bandgap tunability of the Si1-xGex, infrared photodetectors will be fabricated and tested. The introduction of SiC to silicon-based electronics will extend the use of silicon-based heterjunction devices into more demanding environments. The focus of the SiC research will be in the area of electronic devices. The merging of Si1-xGex, SiC and silicon technologies is made possible through low temperature chemical vapor deposition. ***