Second Generation Lead CVD Precursors for PbTio3

第二代 PbTio3 铅 CVD 前驱体

• 批准号: 9360671
• 负责人: Brian Vaartstra
• 金额: $ 6.5万
• 依托单位: Advanced Technology Materials, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-05-01 至 1995-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9360671&HistoricalAwards=false
• 关键词: Second; Generation; Lead; CVD; Precursors

9360671 Gordon This Small Business Innovation Research (SBIR) project is in the general area of inorganic chemistry and in the subfield of Metalorganic Chemical Vapor Deposition (MOCVD). The objective of the Phase I research is the design, synthesis, and decomposition studies of organolead precursors to lead titanate, lead zirconate titanate (PZT) and lead lanthanum titanate (PLZT). These materials are ferroelectric ceramics and find uses in radiation-hard memories, electrooptic spatial light modulators, piezoelectric actuators and infrared detectors. Currently used precursors are either too volatile and too toxic, e.g. tetraethyllead or not volatile enough for MOCVD applications. Two new classes of lead alkoxides will be prepared; (1) lead alkoxides with spatially demanding ligands to prevent aggregation, an (2) cyclopentadienyllead alkoxides, believed to be more stable than alkyllead precursors. Following purification and characterization of the lead precursors, they will be decomposed along with appropriate titanium and/or zirconium alkoxides to produce lead titanate or PZT films. %%% Chemical vapor deposition of lead-based ferroelectric films is desirable for a variety of electronic devices. Synthesis of safer, optimized lead precursors will have an immediate effect on the market for these materials. ***

小行星9360671 这个小企业创新研究（SBIR）项目是在无机化学的一般领域和金属有机化学气相沉积（MOCVD）的子领域。第一阶段研究的目标是钛酸铅、锆钛酸铅（PZT）和钛酸镧铅（PLZT）的有机铅前体的设计、合成和分解研究。这些材料是铁电陶瓷，可用于抗辐射存储器、电光空间光调制器、压电致动器和红外探测器。目前使用的前体或者太易挥发且毒性太大，例如四乙基铅，或者对于MOCVD应用来说不够易挥发。将制备两类新的铅醇盐：（1）具有空间要求高的配体以防止聚集的铅醇盐，以及（2）环戊二烯基铅醇盐，据信比烷基铅前体更稳定。在铅前体的纯化和表征之后，它们将与适当的钛和/或锆醇盐一起沿着分解以产生钛酸铅或PZT膜。 铅基铁电薄膜的化学气相沉积对于各种电子器件是理想的。合成更安全、优化的铅前体将对这些材料的市场产生直接影响。 ***