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Fullerene Precursor Low Temperature Diamond Film Deposition on Electronic Substrates

Fullerene Precursor Low Temperature Diamond Film Deposition on Electronic Substrates
电子基板上富勒烯前驱体低温金刚石薄膜沉积
批准号:
9361391
负责人:
Prakash Arya
金额:
$6.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-01-15 至 1994-09-30

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中文摘要
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英文摘要
9361391 Arya Thermal management is one of the critical aspects in the design of the 2 and 3 dimensional multichip modules (MCM's) to ensure reliability at increased functional densities in electronic devices. Diamond has the highest know thermal conductivity and yet is an electrical insulator. It is proposed to deposit high quality diamond films on high thermal conductivity metal matrix composite heat sinks which will allow powder dissipation of several hundreds of watts in the advance MCM packaging concepts. Recent developments in fullerene chemistry show that the carbon atoms in the pentagons of the spheroidal molecules of C60, C70, etc are predominantly Sp3 hydribdized and are sterically fairly close to the diamond. MER has demonstrated that a small amount of rearrangement of these atoms in highly energetic plasma can result in transformation of fullerenes into diamond. This unique fullerene vapor phase precursor process will be demonstrated and optimized to produce will bonded, high quality thin and thick diamond films at very high growth rates and at low temperatures on the MMC and other electronic substrates. Single, hybrid and magnetically enhanced plasma systems will be investigated along with different plasma gas chemistries to produce polycrystalline diamond films as well as free standing film of geological size and quality diamond which will establish a basis for Phase II optimization and scale-up to economically produce diamond films. ***
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Metal Matrix Composite Heat Sink with Improved Thermal Transmission
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有耗色散介质中Precursor波形成机理及其用于穿透成像的研究
  • 批准号:
    40771133
  • 项目类别:
    面上项目
  • 资助金额:
    30.0万元
  • 批准年份:
    2007
  • 负责人:
    许小剑
  • 依托单位: