Oxidation Studies of Silicon Oxynitride Ceramics Using Time-Resolved Laser Reflectance

利用时间分辨激光反射率研究氮氧化硅陶瓷的氧化

• 批准号: 9401856
• 负责人: Henry Du
• 金额: $ 18.18万
• 依托单位: Stevens Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9401856&HistoricalAwards=false
• 关键词: Oxidation; Studies; Silicon; Oxynitride; Ceramics

9401856 Du Silicon oxynitride is an important structural ceramics. The Principal Investigator wants to study the mechanism that controls the oxidation behavior of silicon oxynitride. Comprehensive studies of oxidation on pure and dense silicon oxynitride will be carried out. To achieve the project objectives a time resolved laser reflectance technique will be used to accurately measure the growth of the oxide layer during oxidation in broad range. Several other techniques e.g. x-ray photoelectron spectroscopy, electron energy loss spectroscopy TEM will be used to perform the chemical and structural characterization of the oxide-substrate interfaces. %%% Study of the mechanisms that controls the oxidation behavior of one of the important structural ceramics, silicon oxynitride, is proposed to be carried out using the time resolved laser reflectance method and various x-ray and electron microscopic techniques. ***

氮化氧硅是一种重要的结构陶瓷。首席研究员想要研究控制氮化硅氧化行为的机制。对纯氮化硅和致密氮化硅的氧化进行了全面的研究。为了实现项目目标，将使用时间分辨激光反射技术在大范围内精确测量氧化过程中氧化层的生长。其他一些技术，如x射线光电子能谱、电子能量损失能谱（TEM）将被用于执行氧化物-衬底界面的化学和结构表征。提出了利用时间分辨激光反射法和各种x射线和电子显微镜技术来研究控制重要结构陶瓷之一氮化硅氧化行为的机理。＊＊＊