Modified In-Situ Rutherford Design for Early SIMOX Contamination Detection

用于早期 SIMOX 污染检测的改进原位卢瑟福设计

• 批准号: 9424597
• 负责人: Bernhard Cordts
• 金额: $ 30万
• 依托单位: Ibis Technology Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-10-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9424597&HistoricalAwards=false
• 关键词: Modified; Situ; Rutherford; Design; Early

*** 9424597 Ryding This Small Business Innovation Research Phase II project will continue the design and implementation of an in-situ Rutherford spectroscopy system for monitoring surface contamination of Silicon on Insulator (SOI) Separation by Implantation of Oxygen SIMOX materials. In Phase I a miniature Rutherford backscattering (RBS) system was designed fabricated and tested. The RBS system utilized the implantation system's existing high current, high energy oxygen ion beam as the primary backscatter source, with theoretically predicted and obtained sensitivity enhancement. Signatures of specified contaminants were graphed as the final task of the Phase I feasibility demonstration. Advantages of (SOI) SIMOX material include low power, low voltage integrated circuitry, radiation-hardened memories for space applications, and high (2 300 C) temperature/cryogenic applications. The purity of the active silicon and buried oxide layers is of keen interest for the success of the technology. Early analysis and detection of impurity content in the silicon layer is desired for cost reduction purposes as well as impurity source identification. The Phase II proposal incorporates more elegant design features for attachment to production implantation equipment. Pulsed channel measurements of the backscattered signal are planned for absolute analysis of contamination concentrations. Surface contamination analysis of specially fabricated 10A thin film metallic samples as well as manufactured SIMOX SOI is incorporated in the Phase II work plan. Global commercialization of this product is an anticipated result of successful Phase II research. Ion implantation, in general, as well as the silicon electronic industry should benefit from the development of an in-situ, miniature RBS system for contamination detection. Used in an ion implant process as a quality control feedback tool, it can be packaged and sold for existing and new implanters. ***

* 9424597 Ryding 这个小型企业创新研究第二阶段项目将继续设计和实施一个原位卢瑟福光谱系统，用于监测绝缘体上硅（SOI）通过注入氧SIMOX材料分离的表面污染。 在第一阶段，设计、制造和测试了一个微型卢瑟福背散射（RBS）系统。 RBS系统利用注入系统现有的高电流，高能量的氧离子束作为主要的背散射源，与理论预测和获得的灵敏度增强。作为第一阶段可行性论证的最终任务，绘制了特定污染物的特征图。 （SOI）SIMOX材料的优点包括低功率、低电压集成电路、用于空间应用的抗辐射存储器以及高温（2300 ℃）/低温应用。 活性硅和埋氧层的纯度是该技术成功的关键。 出于降低成本以及杂质源识别的目的，期望对硅层中的杂质含量进行早期分析和检测。第二阶段的提案包括更优雅的设计功能，用于连接到生产植入设备。 脉冲通道测量的后向散射信号的污染浓度的绝对分析计划。 专门制造的10 A薄膜金属样品以及制造的SIMOX SOI的表面污染分析被纳入第二阶段工作计划。 该产品的全球商业化是成功的第二阶段研究的预期结果。 离子注入，在一般情况下，以及硅电子工业应受益于原位，微型RBS系统的污染检测的发展。在离子注入过程中作为质量控制反馈工具使用，它可以包装并出售给现有和新的制造商。 ***