Modified In-Situ Rutherford Design for Early SIMOX Contamination Detection

*** 9424597 Ryding这个小型企业创新研究二期项目将继续设计和实施一个原位卢瑟福光谱系统，用于监测氧SIMOX材料注入分离SOI的表面污染。在第一阶段，设计、制造和测试了一个微型卢瑟福后向散射系统。RBS系统利用注入系统现有的大电流、高能氧离子束作为主要后向散射源，理论上预测并获得了灵敏度增强。指定污染物的特征被绘制成图表，作为第一阶段可行性论证的最后任务。（SOI） SIMOX材料的优点包括低功耗，低电压集成电路，适用于空间应用的抗辐射存储器，以及高（2 300℃）温度/低温应用。活性硅和埋藏氧化层的纯度是该技术成功与否的关键。为了降低成本以及杂质来源鉴定，需要对硅层中的杂质含量进行早期分析和检测。第二阶段的方案结合了更优雅的设计特点，用于连接到生产植入设备。反向散射信号的脉冲通道测量计划用于污染浓度的绝对分析。特别制作的10A薄膜金属样品和制造的SIMOX SOI的表面污染分析纳入了第二阶段的工作计划。该产品的全球商业化是二期研究成功的预期结果。一般来说，离子注入以及硅电子工业应该受益于原位微型RBS污染检测系统的发展。在离子植入过程中作为质量控制反馈工具使用，它可以包装和销售现有的和新的植入器。＊＊＊

*** 9424597 Ryding This Small Business Innovation Research Phase II project will continue the design and implementation of an in-situ Rutherford spectroscopy system for monitoring surface contamination of Silicon on Insulator (SOI) Separation by Implantation of Oxygen SIMOX materials. In Phase I a miniature Rutherford backscattering (RBS) system was designed fabricated and tested. The RBS system utilized the implantation system's existing high current, high energy oxygen ion beam as the primary backscatter source, with theoretically predicted and obtained sensitivity enhancement. Signatures of specified contaminants were graphed as the final task of the Phase I feasibility demonstration. Advantages of (SOI) SIMOX material include low power, low voltage integrated circuitry, radiation-hardened memories for space applications, and high (2 300 C) temperature/cryogenic applications. The purity of the active silicon and buried oxide layers is of keen interest for the success of the technology. Early analysis and detection of impurity content in the silicon layer is desired for cost reduction purposes as well as impurity source identification. The Phase II proposal incorporates more elegant design features for attachment to production implantation equipment. Pulsed channel measurements of the backscattered signal are planned for absolute analysis of contamination concentrations. Surface contamination analysis of specially fabricated 10A thin film metallic samples as well as manufactured SIMOX SOI is incorporated in the Phase II work plan. Global commercialization of this product is an anticipated result of successful Phase II research. Ion implantation, in general, as well as the silicon electronic industry should benefit from the development of an in-situ, miniature RBS system for contamination detection. Used in an ion implant process as a quality control feedback tool, it can be packaged and sold for existing and new implanters. ***