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NSF Young Investigator

NSF Young Investigator
NSF 青年研究员
批准号:
9458046
负责人:
Steven Ringel
金额:
$28.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-08-01 至 2000-06-30
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项目摘要

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中文摘要
翻译
9458046林格尔研究将针对晶格失配的半导体异质结构中位错的电子特性的更好的理解,它们与位错微观结构的关系,以及对电钝化位错的有害性质的方法的探索。 将详细考虑杂质和非本征过程的影响,例如在特定器件应用中遇到的杂质和非本征过程。 重点是三个技术上重要的半导体系统,III-V/硅,锗硅/硅和氮化物为基础的宽带隙III-V材料。 拟议的研究采用了一系列独特的互补电子,微结构和原子分辨率测量技术,除了外延生长和处理设施进行拟议的研究。 这项研究将从电子的角度对半导体异质结构中位错的材料科学做出根本性的贡献,再加上对位错控制的更好理解,将对晶格失配电子材料的集成产生重大影响。这项研究预计将提供改进的基本理解的缺陷所产生的单片集成的不同的半导体材料的电子特性,并调查方法来控制这些缺陷的不良性能。 研究结果对多功能器件和集成光电子学的发展具有重要意义,这些器件和集成光电子学由集成到同一衬底上的不同类型的材料组成。该研究项目的一个重要特点是在材料和加工研究的基本和技术重要领域培训研究生和本科生。 ***
英文摘要
9458046 Ringel Research will be directed toward an improved understanding of the electronic properties of dislocations in lattice mismatched semiconductor heterostructures, their relationship with dislocation microstructure, and an exploration of methods to electrically passivate the deleterious nature of dislocations. The effects of impurities and extrinsic processes such as those encountered for specific device applications, will be considered in detail. The focus is on three technologically important semiconductor systems, III-V/Silicon, Germanium-Silicon/Silicon and nitride based wide bandgap III-V materials. The proposed research incorporates a unique array of complementary electronic, microstructural, and atomic resolution measurement techniques, in addition to epitaxial growth and processing facilities to perform the proposed studies. This research will make fundamental contributions to the materials science of dislocations in semiconductor heterostructures from an electronic perspective which, coupled with an improved understanding of dislocation control, will have significant impact on integration of lattice mismatched electronic materials for advanced device applications. %%%%%% This research is expected to provide improved fundamental understanding of the electronic properties of defects resulting from the monolithic integration of dissimilar semiconducting materials, and to investigate methods to control the undesirable properties of these defects. The results will be of importance to the development of multi-functional devices and integrated optoelectronics that consist of different classes of materials integrated onto a common substrate. An important feature of this research project is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. ***
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会议论文
Electronic, Chemical and Structural Properties of Metamorphic III-V Compound Heterojunctions and Devices
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