NSF Young Investigator
NSF Young Investigator
批准号:
9458046
负责人:
Steven Ringel
金额:
$28.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-08-01 至 2000-06-30
关键词:
中文摘要
Ringel研究将致力于提高对晶格错配半导体异质结构中位错的电子特性的理解,以及它们与位错微观结构的关系,并探索电钝化位错有害性质的方法。杂质和外部过程的影响,如在特定设备应用中遇到的那些,将被详细考虑。重点是三种技术上重要的半导体系统,III-V/硅,锗硅/硅和氮化物基宽带隙III-V材料。拟议的研究结合了一系列独特的互补电子,微结构和原子分辨率测量技术,以及外延生长和加工设备来执行拟议的研究。这项研究将从电子的角度对半导体异质结构中的位错的材料科学做出根本性的贡献,再加上对位错控制的改进理解,将对先进器件应用中晶格不匹配电子材料的集成产生重大影响。%%%%%%本研究有望对不同半导体材料单片集成导致的缺陷的电子特性提供改进的基本理解,并研究控制这些缺陷的不良特性的方法。这一结果将对多功能器件和集成光电子学的发展具有重要意义,这些器件由不同类别的材料集成到共同的衬底上。该研究项目的一个重要特点是培养研究生和本科生在材料和加工研究的基础和技术上具有重要意义的领域。* * *
英文摘要
9458046 Ringel Research will be directed toward an improved understanding of the electronic properties of dislocations in lattice mismatched semiconductor heterostructures, their relationship with dislocation microstructure, and an exploration of methods to electrically passivate the deleterious nature of dislocations. The effects of impurities and extrinsic processes such as those encountered for specific device applications, will be considered in detail. The focus is on three technologically important semiconductor systems, III-V/Silicon, Germanium-Silicon/Silicon and nitride based wide bandgap III-V materials. The proposed research incorporates a unique array of complementary electronic, microstructural, and atomic resolution measurement techniques, in addition to epitaxial growth and processing facilities to perform the proposed studies. This research will make fundamental contributions to the materials science of dislocations in semiconductor heterostructures from an electronic perspective which, coupled with an improved understanding of dislocation control, will have significant impact on integration of lattice mismatched electronic materials for advanced device applications. %%%%%% This research is expected to provide improved fundamental understanding of the electronic properties of defects resulting from the monolithic integration of dissimilar semiconducting materials, and to investigate methods to control the undesirable properties of these defects. The results will be of importance to the development of multi-functional devices and integrated optoelectronics that consist of different classes of materials integrated onto a common substrate. An important feature of this research project is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. ***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Electronic, Chemical and Structural Properties of Metamorphic III-V Compound Heterojunctions and Devices
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批准号:0313468
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项目类别:Continuing Grant
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资助金额:$90.0万
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财政年份:2003
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负责人:Steven Ringel
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依托单位:
海外基金