NSF Young Investigator

NSF 青年研究员

• 批准号: 9458046
• 负责人: Steven Ringel
• 金额: $ 28万
• 依托单位: Ohio State University Research Foundation -DO NOT USE
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9458046&HistoricalAwards=false
• 关键词: NSF; Young; Investigator

9458046 Ringel Research will be directed toward an improved understanding of the electronic properties of dislocations in lattice mismatched semiconductor heterostructures, their relationship with dislocation microstructure, and an exploration of methods to electrically passivate the deleterious nature of dislocations. The effects of impurities and extrinsic processes such as those encountered for specific device applications, will be considered in detail. The focus is on three technologically important semiconductor systems, III-V/Silicon, Germanium-Silicon/Silicon and nitride based wide bandgap III-V materials. The proposed research incorporates a unique array of complementary electronic, microstructural, and atomic resolution measurement techniques, in addition to epitaxial growth and processing facilities to perform the proposed studies. This research will make fundamental contributions to the materials science of dislocations in semiconductor heterostructures from an electronic perspective which, coupled with an improved understanding of dislocation control, will have significant impact on integration of lattice mismatched electronic materials for advanced device applications. %%%%%% This research is expected to provide improved fundamental understanding of the electronic properties of defects resulting from the monolithic integration of dissimilar semiconducting materials, and to investigate methods to control the undesirable properties of these defects. The results will be of importance to the development of multi-functional devices and integrated optoelectronics that consist of different classes of materials integrated onto a common substrate. An important feature of this research project is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. ***

9458046 Ringel Research 将致力于更好地理解晶格失配半导体异质结构中位错的电子特性、它们与位错微结构的关系，并探索电钝化位错有害性质的方法。 将详细考虑杂质和外在过程（例如特定器件应用中遇到的杂质和外在过程）的影响。 重点是三种技术上重要的半导体系统：III-V族/硅、锗硅/硅和氮化物基宽带隙III-V族材料。 拟议的研究结合了一系列独特的互补电子、微观结构和原子分辨率测量技术，以及外延生长和处理设施来执行拟议的研究。 这项研究将从电子角度对半导体异质结构位错的材料科学做出基础性贡献，再加上对位错控制的更好理解，将对先进器件应用的晶格失配电子材料的集成产生重大影响。 %%%%%% 这项研究预计将提高对异种半导体材料单片集成所产生的缺陷的电子特性的基本了解，并研究控制这些缺陷的不良特性的方法。 这些结果对于开发由集成到公共基板上的不同类别材料组成的多功能器件和集成光电子学具有重要意义。该研究项目的一个重要特点是在材料和加工研究的基础和技术重要领域对研究生和本科生进行培训。 ***