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ZnSe Substrates and Blue-Green Laser Diodes

ZnSe Substrates and Blue-Green Laser Diodes
ZnSe 基板和蓝绿激光二极管
批准号:
9460228
负责人:
Muren Chu
金额:
$7.49万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1995
资助国家:
美国
项目状态:
已结题
起止时间:
1995-02-01 至 1996-03-31

项目摘要

项目成果

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中文摘要
翻译
这个小企业创新研究第一阶段项目解决了ZnSSe蓝绿led和激光器开发中的关键衬底问题。近年来,由于蓝绿led和激光二极管在显示、电子、通信和信息存储等领域的应用具有巨大的市场潜力,人们对其研究和开发非常感兴趣。在所有的半导体中,基于ZnSe的半导体是制造蓝绿色激光器的主要候选者之一。虽然基于ZnSe的led和激光二极管最近已经生产出来,但它们的寿命一直是一个关键问题。寿命不足的主要原因之一是缺乏器件质量的ZnSe衬底。Fermionics公司在分析了过去和现在的ZnSe晶体生长技术和II-V1半导体化合物缺陷化学之后,提出了一种在低温下生长ZnSe晶体的创新方法。他们不仅计划生长ZnSe单晶,而且还计划生产具有最低晶体缺陷的晶体。此外,他们将研究原位杂质掺杂制备高导电性p型ZnSe的可行性。在第一阶段,将证明生长高质量ZnSe单晶的可行性。在第二阶段,将生产大型ZnSe晶体,并制造ZnSSe led和激光二极管。最后,在第三阶段,这些产品将商业化。
英文摘要
This Small Business Innovation Research Phase I project addresses the critical substrate issue in the development of ZnSSe blue-green LEDs and Lasers. Recently, there has been much interest in the research and development of blue-green LEDs and laser diodes due to the tremendous market potential for their applications in displays, electronics, communications and information storage. Among all the semiconductors, ZnSe based semiconductors are one of the prime candidates for the fabrication of blue-green lasers. Although ZnSe based LEDs and laser diodes have recently been produced, their lifetime has been a critical issue. One of the major causes of the insufficient lifetime is the lack of device quality ZnSe substrates. After analyzing past and current ZnSe crystal growth techniques and II-V1 semiconductor compound defect chemistry, Fermionics Corporation proposes an innovative method to grow ZnSe crystals at low temperatures. They plan to not only grow ZnSe single crystals, but also produce crystals with the lowest crystalline defects. In addition, they will study the feasibility of producing high conductivity p-type ZnSe by in situ impurity doping. In Phase I, the feasibility of growing high quality ZnSe single crystal will be demonstrated. In Phase II, large ZnSe crystals will be produced, and ZnSSe LEDs and laser diodes will be fabricated. Finally, in Phase III, these products will be commercialized.
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SBIR Phase I: Advanced CdZnTe for Room Temperature Radiation Detection
  • 批准号:
    0211476
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    2002
  • 负责人:
    Muren Chu
  • 依托单位:
SBIR Phase II: Zinc Selenide Substrates and Blue-Green Laser Diodes
  • 批准号:
    9531283
  • 项目类别:
    Standard Grant
  • 资助金额:
    $29.97万
  • 财政年份:
    1997
  • 负责人:
    Muren Chu
  • 依托单位:
New Avalanche Photodiodes for Fiberoptics Applications
  • 批准号:
    8521253
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.23万
  • 财政年份:
    1988
  • 负责人:
    Muren Chu
  • 依托单位:
Development of 1.30 Micron and 1.55 Micron LPE and MOCVD HgCdTe Avalanche Photodiodes
  • 批准号:
    8460838
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    1985
  • 负责人:
    Muren Chu
  • 依托单位:
海外基金